2SK767 PDF Specs and Replacement
Type Designator: 2SK767
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 5
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8
Ohm
Package:
TO220F
-
MOSFET ⓘ Cross-Reference Search
2SK767 PDF Specs
..1. Size:234K inchange semiconductor
2sk767.pdf 
isc N-Channel MOSFET Transistor 2SK767 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conver... See More ⇒
9.4. Size:237K inchange semiconductor
2sk768.pdf 
isc N-Channel MOSFET Transistor 2SK768 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conve... See More ⇒
9.5. Size:234K inchange semiconductor
2sk769.pdf 
isc N-Channel MOSFET Transistor 2SK769 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conve... See More ⇒
9.6. Size:237K inchange semiconductor
2sk764a.pdf 
isc N-Channel MOSFET Transistor 2SK764A DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conv... See More ⇒
9.7. Size:234K inchange semiconductor
2sk762.pdf 
isc N-Channel MOSFET Transistor 2SK762 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conver... See More ⇒
9.8. Size:234K inchange semiconductor
2sk766.pdf 
isc N-Channel MOSFET Transistor 2SK766 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conver... See More ⇒
9.9. Size:235K inchange semiconductor
2sk765.pdf 
isc N-Channel MOSFET Transistor 2SK765 DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conv... See More ⇒
9.10. Size:242K inchange semiconductor
2sk765a.pdf 
isc N-Channel MOSFET Transistor 2SK765A DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, con... See More ⇒
9.11. Size:237K inchange semiconductor
2sk764.pdf 
isc N-Channel MOSFET Transistor 2SK764 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conve... See More ⇒
9.12. Size:235K inchange semiconductor
2sk763.pdf 
isc N-Channel MOSFET Transistor 2SK763 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conver... See More ⇒
Detailed specifications: 2SK753
, 2SK754
, 2SK755
, 2SK756
, 2SK757
, 2SK759
, 2SK763
, 2SK766
, IRFB4115
, 40N20
, FIR4N65F
, IRFP256
, IRFP257
, SUD40N06-25L
, DTU40N06
, SUP40N06-25L
, SUB40N06-25L
.
Keywords - 2SK767 MOSFET specs
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