FIR4N65F Datasheet and Replacement

INCHANGE Semiconductorisc N-Channel Mosfet Transistor FIR4N65FFEATURESDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0(Max)DS(on)Avalanche Energy SpecifiedFast SwitchingSimple Drive RequirementsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationD

FIR4N65FGAdvanced N-Ch Power MOSFET-HPIN Connection TO-220FGeneral Description FIR4N65FG , the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching G D S performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system gSchematic di

FIR4N65AFG650V N-Channel MOSFET PIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=13.7nC (Typ.). BVDSS=650V,ID=4AG D S RDS(on) : 2.6 (Max) @VG=10V 100% Avalanche TestedgSchematic dia ram D G S Marking DiagramY = YearA = Assemb

FIR4N65LGAdvanced N-Ch Power MOSFET-HPIN Connection TO-252(D-PAK)General Description FIR4N65LG , the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology Dwhich reduce the conduction loss, improve switching Gperformance and enhance the avalanche energy. The transistor Scan be used in various power switching circuit for system miniaturiz

FIR4N65BPGAdvanced N-Ch Power MOSFETPIN Connection TO-251(I-PAK)General DescriptionFIR4N65BPGis an N-channel enhancement mode powerMOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state 1 2 3resistance, pro