All MOSFET. FIR4N65F Datasheet

 

FIR4N65F MOSFET. Datasheet pdf. Equivalent

Type Designator: FIR4N65F

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 106 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 13.7 nC

Rise Time (tr): 45 nS

Drain-Source Capacitance (Cd): 70 pF

Maximum Drain-Source On-State Resistance (Rds): 3 Ohm

Package: TO220F

FIR4N65F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FIR4N65F Datasheet (PDF)

1.1. fir4n65f.pdf Size:199K _update-mosfet

FIR4N65F FIR4N65F

INCHANGE Semiconductor isc N-Channel Mosfet Transistor FIR4N65F ·FEATURES ·Drain Current –I = 4A@ T =25℃ D C ·Drain Source Voltage- : V = 650V(Min) DSS ·Static Drain-Source On-Resistance : R = 3.0Ω(Max) DS(on) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·D

3.1. fir4n65afg.pdf Size:3060K _update-mosfet

FIR4N65F FIR4N65F

FIR4N65AFG 650V N-Channel MOSFET PIN Connection TO-220F Features: □ Low Intrinsic Capacitances. □ Excellent Switching Characteristics. □ Extended Safe Operating Area. □ Unrivalled Gate Charge :Qg=13.7nC (Typ.). □ BVDSS=650V,ID=4A G D S □ RDS(on) : 2.6 Ω (Max) @VG=10V □ 100% Avalanche Tested g Schematic dia ram D G S Marking Diagram Y = Year A = Assemb

 

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top