FIR4N65F Datasheet and Replacement
Type Designator: FIR4N65F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 106 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO220F
FIR4N65F substitution
FIR4N65F Datasheet (PDF)
fir4n65f.pdf

INCHANGE Semiconductorisc N-Channel Mosfet Transistor FIR4N65FFEATURESDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0(Max)DS(on)Avalanche Energy SpecifiedFast SwitchingSimple Drive RequirementsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationD
fir4n65fg.pdf

FIR4N65FGAdvanced N-Ch Power MOSFET-HPIN Connection TO-220FGeneral Description FIR4N65FG , the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching G D S performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system gSchematic di
fir4n65afg.pdf

FIR4N65AFG650V N-Channel MOSFET PIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=13.7nC (Typ.). BVDSS=650V,ID=4AG D S RDS(on) : 2.6 (Max) @VG=10V 100% Avalanche TestedgSchematic dia ram D G S Marking DiagramY = YearA = Assemb
fir4n65lg.pdf

FIR4N65LGAdvanced N-Ch Power MOSFET-HPIN Connection TO-252(D-PAK)General Description FIR4N65LG , the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology Dwhich reduce the conduction loss, improve switching Gperformance and enhance the avalanche energy. The transistor Scan be used in various power switching circuit for system miniaturiz
Datasheet: 2SK755 , 2SK756 , 2SK757 , 2SK759 , 2SK763 , 2SK766 , 2SK767 , 40N20 , IRFB4115 , IRFP256 , IRFP257 , SUD40N06-25L , DTU40N06 , SUP40N06-25L , SUB40N06-25L , BR80N08A , KIA2806A .
History: RHK005N03FRA
Keywords - FIR4N65F MOSFET datasheet
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FIR4N65F replacement
History: RHK005N03FRA



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