All MOSFET. SPP80N06S2-05 Datasheet

 

SPP80N06S2-05 Datasheet and Replacement


   Type Designator: SPP80N06S2-05
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 1330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0051 Ohm
   Package: TO220
 

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SPP80N06S2-05 Datasheet (PDF)

 ..1. Size:345K  infineon
spp80n06s2-05 spb80n06s2-05.pdf pdf_icon

SPP80N06S2-05

www.DataSheet4U.com SPP80N06S2-05SPB80N06S2-05OptiMOS Power-TransistorProduct SummaryFeatureVDS 55 V N-ChannelRDS(on) max. SMD version 4.8 m Enhancement modeID 80 A 175C operating temperatureP- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2-05 P- TO220 -3-1 Q67040-S42452N0605SPB80N06S2-05

 2.1. Size:516K  infineon
spb80n06s2-09 spp80n06s2-09.pdf pdf_icon

SPP80N06S2-05

SPP80N06S2-09Preliminary dataSPB80N06S2-09OptiMOS =Power-Transistor===Product SummaryFeatureVDS55 V N-ChannelRDS(on) 9.1 m Enhancement modeID 80 A 175C operating temperatureP-TO263-3-2 P-TO220-3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2-09 P-TO220-3-1 Q67060-S60252N0609SPB80N06S2-09 P-TO263-3-2 Q67060-S6027 2N0609Maxi

 2.2. Size:419K  infineon
spp80n06s2-08 spb80n06s2-08 spi80n06s2-08.pdf pdf_icon

SPP80N06S2-05

SPI80N06S2-08SPP80N06S2-08,SPB80N06S2-08OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) 8 m Enhancement modeID 80 A 175C operating temperatureP- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2-08 P- TO220 -3-1 Q67060-S42832N0608SPB80N06S2-08 P- TO263 -

 4.1. Size:311K  infineon
spp80n06s2l-09 spb80n06s2l-09.pdf pdf_icon

SPP80N06S2-05

SPP80N06S2L-09SPB80N06S2L-09OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) 8.5 m Enhancement modeID 80 A Logic LevelP- TO263 -3-2 P- TO220 -3-1 175C operating temperature Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2L-09 P- TO220 -3-1 Q67060-S60312N06L09SPB80N06S2L-09 P- TO263 -3-2

Datasheet: DTU40N06 , SUP40N06-25L , SUB40N06-25L , BR80N08A , KIA2806A , SPD22N08S2L-50 , SPD50N06S2-14 , SPN02N60C3 , 5N60 , SPB80N06S2-05 , SPP80N06S2L-07 , SPB80N06S2L-07 , SPP80N06S2L-09 , SPB80N06S2L-09 , SPP80N06S2L-H5 , SPB80N06S2L-H5 , SPP100N06S2L-05 .

History: IRLR3915PBF | SSI4N90A | SWK15P03 | SML30B48 | STB10LN80K5 | IRHQ7110 | IRF823FI

Keywords - SPP80N06S2-05 MOSFET datasheet

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 SPP80N06S2-05 replacement

 

 
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