All MOSFET. SPP80N06S2L-09 Datasheet

 

SPP80N06S2L-09 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SPP80N06S2L-09
   Marking Code: 2N06L09
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 80 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 610 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO220

 SPP80N06S2L-09 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPP80N06S2L-09 Datasheet (PDF)

 ..1. Size:311K  infineon
 spp80n06s2l-09 spb80n06s2l-09.pdf

SPP80N06S2L-09 SPP80N06S2L-09

SPP80N06S2L-09SPB80N06S2L-09OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) 8.5 m Enhancement modeID 80 A Logic LevelP- TO263 -3-2 P- TO220 -3-1 175C operating temperature Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2L-09 P- TO220 -3-1 Q67060-S60312N06L09SPB80N06S2L-09 P- TO263 -3-2

 1.1. Size:308K  infineon
 spp80n06s2l-07 spb80n06s2l-07.pdf

SPP80N06S2L-09 SPP80N06S2L-09

SPP80N06S2L-07SPB80N06S2L-07OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) 7 m Enhancement modeID 80 A Logic LevelP- TO263 -3-2 P- TO220 -3-1 175C operating temperature Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2L-07 P- TO220 -3-1 Q67040-S42852N06L07SPB80N06S2L-07 P- TO263 -3-2 Q6

 2.1. Size:311K  infineon
 spp80n06s2l-h5 spb80n06s2l-h5.pdf

SPP80N06S2L-09 SPP80N06S2L-09

SPP80N06S2L-H5SPB80N06S2L-H5OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) 5 m Enhancement modeID 80 A 175C operating temperatureP- TO263 -3-2 P- TO220 -3-1 dv/dt ratedType Package Ordering Code MarkingSPP80N06S2L-H5 P- TO220 -3-1 Q67060-S60542N06LH5SPB80N06S2L-H5 P- TO263 -3-2 Q67060-S6055 2N06LH5Maximum Ratings, a

 4.1. Size:345K  infineon
 spp80n06s2-05 spb80n06s2-05.pdf

SPP80N06S2L-09 SPP80N06S2L-09

www.DataSheet4U.com SPP80N06S2-05SPB80N06S2-05OptiMOS Power-TransistorProduct SummaryFeatureVDS 55 V N-ChannelRDS(on) max. SMD version 4.8 m Enhancement modeID 80 A 175C operating temperatureP- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2-05 P- TO220 -3-1 Q67040-S42452N0605SPB80N06S2-05

 4.2. Size:516K  infineon
 spb80n06s2-09 spp80n06s2-09.pdf

SPP80N06S2L-09 SPP80N06S2L-09

SPP80N06S2-09Preliminary dataSPB80N06S2-09OptiMOS =Power-Transistor===Product SummaryFeatureVDS55 V N-ChannelRDS(on) 9.1 m Enhancement modeID 80 A 175C operating temperatureP-TO263-3-2 P-TO220-3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2-09 P-TO220-3-1 Q67060-S60252N0609SPB80N06S2-09 P-TO263-3-2 Q67060-S6027 2N0609Maxi

 4.3. Size:419K  infineon
 spp80n06s2-08 spb80n06s2-08 spi80n06s2-08.pdf

SPP80N06S2L-09 SPP80N06S2L-09

SPI80N06S2-08SPP80N06S2-08,SPB80N06S2-08OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) 8 m Enhancement modeID 80 A 175C operating temperatureP- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2-08 P- TO220 -3-1 Q67060-S42832N0608SPB80N06S2-08 P- TO263 -

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: SVF2N60RDTR

 

 
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