All MOSFET. SPP100N06S2L-05 Datasheet

 

SPP100N06S2L-05 Datasheet and Replacement


   Type Designator: SPP100N06S2L-05
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 1330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm
   Package: TO220
 

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SPP100N06S2L-05 Datasheet (PDF)

 0.1. Size:310K  infineon
 spp100n06s2l-05 spb100n06s2l-05.pdf pdf_icon

SPP100N06S2L-05

SPP100N06S2L-05SPB100N06S2L-05OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) max. SMD version 4.4 m Enhancement modeID 100 A Logic LevelP- TO263 -3-2 P- TO220 -3-1 175C operating temperature Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP100N06S2L-05 P- TO220 -3-1 Q67060-S6043PN06L05SPB100N0

 3.1. Size:312K  1
 spp100n06s2-05 spb100n06s2-05.pdf pdf_icon

SPP100N06S2L-05

SPP100N06S2-05SPB100N06S2-05OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) max. SMD version 4.7 m Enhancement modeID 100 A 175C operating temperatureP- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP100N06S2-05 P- TO220 -3-1 Q67060-S6048PN0605SPB100N06S2-05 P- TO263 -3-2

 6.1. Size:200K  1
 spp100n08s2l-07 spb100n08s2l-07.pdf pdf_icon

SPP100N06S2L-05

SPP100N08S2L-07SPB100N08S2L-07OptiMOS Power-TransistorProduct SummaryFeatureVDS75 V N-ChannelRDS(on) max. SMD version 6.5 m Enhancement modeID 100 A Logic LevelP- TO263 -3-2 P- TO220 -3-1 175C operating temperature Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP100N08S2L-07 P- TO220 -3-1 Q67060-S6045PN08L07SPB100N0

 6.2. Size:309K  infineon
 spp100n08s2-07 spb100n08s2-07.pdf pdf_icon

SPP100N06S2L-05

SPP100N08S2-07SPB100N08S2-07OptiMOS Power-TransistorProduct SummaryFeatureVDS75 V N-ChannelRDS(on) max. SMD version 6.8 m Enhancement modeID 100 A 175C operating temperatureP- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP100N08S2-07 P- TO220 -3-1 Q67060-S6044PN0807SPB100N08S2-07 P- TO263 -3-2

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Datasheet: SPP80N06S2-05 , SPB80N06S2-05 , SPP80N06S2L-07 , SPB80N06S2L-07 , SPP80N06S2L-09 , SPB80N06S2L-09 , SPP80N06S2L-H5 , SPB80N06S2L-H5 , TK10A60D , SPB100N06S2L-05 , G1003 , G1818 , G2002L , GKI03026 , GKI03039 , GKI03061 , GKI03080 .

History: SI4431BDY

Keywords - SPP100N06S2L-05 MOSFET datasheet

 SPP100N06S2L-05 cross reference
 SPP100N06S2L-05 equivalent finder
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 SPP100N06S2L-05 substitution
 SPP100N06S2L-05 replacement

 

 
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