GM2301
MOSFET. Datasheet pdf. Equivalent
Type Designator: GM2301
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.9
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 2.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 120
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1
Ohm
Package:
SOT-23
GM2301
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GM2301
Datasheet (PDF)
..1. Size:293K gsme
gm2301.pdf
Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM2301SOT-23 (SOT-23 Field Effect Transistors)P-Channel Enhancement-Mode MOS FETsP-Channel Enhancement-Mode MOS FETsP-Channel Enhancement-Mode MOS FET
9.1. Size:398K secos
sgm2306a.pdf
SGM2306A5A, 30V,RDS(ON) 35m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductDescriptionSOT-89The SGM2306A utilized advanced processing techniques toachieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.The SGM2306A is universally used for all commercial-industrial surface mount applications.
9.2. Size:1782K secos
sgm2305a.pdf
SGM2305A -3.2 A, -30 V, RDS(ON) 80 m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES A The SGM2305A provide the designer with best combination of fast switching, 4Top ViewC Blow on-resistance and cost-effectiveness. The SGM2305A is universally preferred
9.3. Size:292K gsme
gm2302.pdf
Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM2302SOT-23 (SOT-23 Field Effect Transistors)N-Channel Enhancement-Mode MOS FETsN-Channel Enhancement-Mode MOS FETsN-Channel Enhancement-Mode MOS FET
9.4. Size:1152K cn hunteck
hgm230n10al.pdf
HGM230N10AL P-1100V N-Ch Power MOSFETFeature 100 VVDS High Speed Power Switching, Logic Level 21.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 28RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 20 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS
9.5. Size:887K cn vbsemi
sgm2306a.pdf
SGM2306Awww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.022 at VGS = 4.5 V 6.8RoHS30 10 nC COMPLIANTAPPLICATIONS0.027 at VGS = 2.5 V 6.0 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise n
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