GP1M003A040XG Specs and Replacement
Type Designator: GP1M003A040XG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 32 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
GP1M003A040XG substitution
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GP1M003A040XG datasheet
gp1m003a040xg.pdf
GP1M003A040CG GP1M003A040PG Features VDSS = 440 V @Tjmax Low gate charge ID = 2A 100% avalanche tested RDS(on) = 3.4 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance D D-PAK I-PAK G S Device Package Marking Remark GP1M003A040CG D-PAK GP1M003A040CG RoHS ... See More ⇒
gp1m003a080xx.pdf
GP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH VDSS = 880 V @Tjmax Features ID = 3A Low gate charge RDS(ON) = 4.2 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark GP1M003A080H/ GP1M003A080F TO-220 / TO-220F GP1M003A080H/ GP1M003A080F... See More ⇒
gp1m003a050hg-fg.pdf
GP1M003A050HG GP1M003A050FG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A ... See More ⇒
gp1m003a050xg.pdf
GP1M003A050CG GP1M003A050PG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A ... See More ⇒
Detailed specifications: GM8205, GM8205A, GM8205D, GMP3205, GMP60N06, GMP80N75, GMS2301, GMS2302, STP65NF06, GP1M003A050HG-FG, GP1M003A050XG, GP1M003A080XG, GP1M003A080XX, GP1M003A090XX, GP1M004A090XX, GP1M005A040XG, GP1M005A050XH
Keywords - GP1M003A040XG MOSFET specs
GP1M003A040XG cross reference
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GP1M003A040XG substitution
GP1M003A040XG replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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