GP1M005A050XX MOSFET Datasheet: N-Ch, 500V, 4.5A. Full specification with pinout and replacement list

GP1M005A050XX Specs and Replacement

Type Designator: GP1M005A050XX

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 92.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 61 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.65 Ohm

Package: TO-220 TO-220F

GP1M005A050XX substitution

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GP1M005A050XX datasheet

..1. Size:387K globalpower
gp1m005a050xx.pdf pdf_icon

GP1M005A050H GP1M005A050FH Features VDSS = 550 V @Tjmax Low gate charge ID = 4.5A 100% avalanche tested RDS(ON) = 1.65 (max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D G S Device Package Marking Remark GP1M005A050H TO-220 GP1M005A050H RoHS GP1M005A050FH TO-220F GP1M005A... See More ⇒

0.1. Size:396K globalpower
gp1m005a050xxx.pdf pdf_icon

GP1M005A050HS GP1M005A050FSH Features VDSS = 500V Low gate charge ID = 4A 100% avalanche tested RDS(ON) = 1.85 (max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D G S Device Package Marking Remark GP1M005A050HS TO-220 GP1M005A050HS RoHS GP1M005A050FSH TO-220F GP1M005A050F... See More ⇒

2.1. Size:601K globalpower
gp1m005a050xh.pdf pdf_icon

GP1M005A050CH GP1M005A050PH Features VDSS = 550 V @Tjmax Low gate charge ID = 4.5A 100% avalanche tested RDS(ON) = 1.65 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D I-PAK D-PAK G S Device Package Marking Remark GP1M005A050CH D-PAK GP1M005A050CH Haloge... See More ⇒

5.1. Size:600K globalpower
gp1m005a040xg.pdf pdf_icon

GP1M005A040CG GP1M005A040PG Features VDSS = 440 V @Tjmax Low gate charge ID = 3.4A 100% avalanche tested RDS(on) = 1.6 W(max) @ VGS= 10 V Improved dv/dt capability Halogen free package JEDEC Qualification Improved ESD performance D-PAK D I-PAK G S Device Package Marking Remark GP1M005A040CG D-PAK GP1M005A040CG RoHS GP1M005A040PG I-PAK ... See More ⇒

Detailed specifications: GP1M003A050HG-FG, GP1M003A050XG, GP1M003A080XG, GP1M003A080XX, GP1M003A090XX, GP1M004A090XX, GP1M005A040XG, GP1M005A050XH, AON7403, GP1M005A050XXX, GP1M006A065XH, GP1M006A065XX, GP1M006A070XX, GP1M007A065XX, GP1M007A090XX, GP1M008A025XX, GP1M008A050XG