All MOSFET. GP1M009A020XX Datasheet

 

GP1M009A020XX MOSFET. Datasheet pdf. Equivalent


   Type Designator: GP1M009A020XX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.6 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 86 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO-220 TO-220F

 GP1M009A020XX Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GP1M009A020XX Datasheet (PDF)

 ..1. Size:405K  globalpower
gp1m009a020xx.pdf

GP1M009A020XX GP1M009A020XX

GP1M009A020HGGP1M009A020FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on)MAX 100% avalanche tested200V 9A

 2.1. Size:503K  globalpower
gp1m009a020xg.pdf

GP1M009A020XX GP1M009A020XX

GP1M009A020CG GP1M009A020PG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 200V 9A

 5.1. Size:390K  globalpower
gp1m009a090xx.pdf

GP1M009A020XX GP1M009A020XX

GP1M009A090HGP1M009A090FHVDSS = 990 V @TjmaxFeaturesID = 9A Low gate chargeRDS(ON) = 1.4 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification DGSDevice Package Marking RemarkGP1M009A090H TO-220 GP1M009A090H RoHSGP1M009A090FH TO-220F GP1M009A090FH Halogen FreeAbsolute M

 5.2. Size:539K  globalpower
gp1m009a090n.pdf

GP1M009A020XX GP1M009A020XX

GP1M009A090N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 900V 9.5A

 5.3. Size:408K  globalpower
gp1m009a050xxx.pdf

GP1M009A020XX GP1M009A020XX

GP1M009A050HSGP1M009A050FSHN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge500V 8.5A

 5.4. Size:378K  globalpower
gp1m009a070x.pdf

GP1M009A020XX GP1M009A020XX

GP1M009A070HGP1M006A070FN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge700V 7A

 5.5. Size:390K  globalpower
gp1m009a060xx.pdf

GP1M009A020XX GP1M009A020XX

GP1M009A060HGP1M009A060FHVDSS = 660 V @TjmaxFeaturesID = 9A Low gate chargeRDS(ON) = 1.0 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkGP1M009A060H TO-220 GP1M009A060H RoHSGP1M009A060FH TO-220F GP1M009A060FH Halogen FreeAbsolute Ma

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