GP1M009A020XX Datasheet: MOSFET, N-Ch, 200V, 9A. Full specification with pinout and replacement list

GP1M009A020XX Datasheet. Specs and Replacement

Type Designator: GP1M009A020XX

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 86 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO-220 TO-220F

GP1M009A020XX substitution

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GP1M009A020XX datasheet

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GP1M009A020HG GP1M009A020FG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 200V 9A ... See More ⇒

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GP1M009A020CG GP1M009A020PG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 200V 9A ... See More ⇒

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GP1M009A090H GP1M009A090FH VDSS = 990 V @Tjmax Features ID = 9A Low gate charge RDS(ON) = 1.4 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark GP1M009A090H TO-220 GP1M009A090H RoHS GP1M009A090FH TO-220F GP1M009A090FH Halogen Free Absolute M... See More ⇒

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