All MOSFET. GP2M002A065XX Datasheet

 

GP2M002A065XX Datasheet and Replacement


   Type Designator: GP2M002A065XX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.6 Ohm
   Package: TO-220 TO-220F
 

 GP2M002A065XX substitution

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GP2M002A065XX Datasheet (PDF)

 ..1. Size:394K  globalpower
 gp2m002a065xx.pdf pdf_icon

GP2M002A065XX

GP2M002A065HGGP2M002A065FGFeatures N-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested650V 1.8A

 2.1. Size:499K  globalpower
 gp2m002a065xg.pdf pdf_icon

GP2M002A065XX

GP2M002A065CG GP2M002A065PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A

 4.1. Size:505K  globalpower
 gp2m002a060xx.pdf pdf_icon

GP2M002A065XX

GP2M002A060CG GP2M002A060PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A

 4.2. Size:405K  globalpower
 gp2m002a060xg.pdf pdf_icon

GP2M002A065XX

GP2M002A060HGGP2M002A060FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested600V 2.0A

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Datasheet: GP1T036A060B , GP1T040A120B , GP1T072A060B , GP1T080A120B , GP1T160A120B , GP2M002A060XG , GP2M002A060XX , GP2M002A065XG , IRF4905 , GP2M004A060XG , GP2M004A060XX , GP2M004A065XG , GP2M004A065XX , GP2M005A050XG , GP2M005A050XX , GP2M005A060XG , GP2M005A060XXX .

History: DMN1029UFDB | CJM1206

Keywords - GP2M002A065XX MOSFET datasheet

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