All MOSFET. GP2M002A065XX Datasheet

 

GP2M002A065XX MOSFET. Datasheet pdf. Equivalent


   Type Designator: GP2M002A065XX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 1.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.5 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.6 Ohm
   Package: TO-220 TO-220F

 GP2M002A065XX Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GP2M002A065XX Datasheet (PDF)

 ..1. Size:394K  globalpower
 gp2m002a065xx.pdf

GP2M002A065XX GP2M002A065XX

GP2M002A065HGGP2M002A065FGFeatures N-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested650V 1.8A

 2.1. Size:499K  globalpower
 gp2m002a065xg.pdf

GP2M002A065XX GP2M002A065XX

GP2M002A065CG GP2M002A065PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A

 4.1. Size:505K  globalpower
 gp2m002a060xx.pdf

GP2M002A065XX GP2M002A065XX

GP2M002A060CG GP2M002A060PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A

 4.2. Size:405K  globalpower
 gp2m002a060xg.pdf

GP2M002A065XX GP2M002A065XX

GP2M002A060HGGP2M002A060FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested600V 2.0A

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: JCS24N50ABH

 

 
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