All MOSFET. GP2M005A050XX Datasheet

 

GP2M005A050XX MOSFET. Datasheet pdf. Equivalent


   Type Designator: GP2M005A050XX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 98.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 78 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO-220 TO-220F

 GP2M005A050XX Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GP2M005A050XX Datasheet (PDF)

 ..1. Size:366K  globalpower
 gp2m005a050xx.pdf

GP2M005A050XX GP2M005A050XX

GP2M005A050HGGP2M005A050FGFeatures N-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested500V 4.5A

 2.1. Size:500K  globalpower
 gp2m005a050xg.pdf

GP2M005A050XX GP2M005A050XX

GP2M005A050CG GP2M005A050PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A

 5.1. Size:410K  globalpower
 gp2m005a060xg.pdf

GP2M005A050XX GP2M005A050XX

GP2M005A060HGGP2M005A060FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested600V 4.2A

 5.2. Size:507K  globalpower
 gp2m005a060xxx.pdf

GP2M005A050XX GP2M005A050XX

GP2M005A060CG GP2M005A060PG(H) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.2A

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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