All MOSFET. GSM1016 Datasheet

 

GSM1016 Datasheet and Replacement


   Type Designator: GSM1016
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: SOT-563
 

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GSM1016 Datasheet (PDF)

 ..1. Size:3060K  globaltech semi
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GSM1016

GSM1016 N & P Pair Enhancement Mode MOSFET Product Description Features GSM1016, N & P Pair enhancement mode N-ChannelMOSFET, uses Advanced Trench Technology to 20V/0.6A,RDS(ON)=360m@VGS=4.5V provide excellent RDS(ON), low gate charge. 20V/0.5A,RDS(ON)=420m@VGS=2.5V 20V/0.4A,RDS(ON)=560m@VGS=1.8V These devices are particularly suited for low P-Channelvoltage power ma

 8.1. Size:995K  globaltech semi
 gsm1012e.pdf pdf_icon

GSM1016

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1012E, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.5A,RDS(ON)=420m@VGS=2.5V provide excellent RDS(ON), low gate charge. These 20V/0.4A,RDS(ON)=560m@VGS=1.8V devices are particularly suited for low voltage Low Offset (Error) Voltage power

 8.2. Size:621K  globaltech semi
 gsm1013e.pdf pdf_icon

GSM1016

GSM1013E 20V P-Channel Enhancement Mode MOSFET Product Description Features -20V/-0.6A,RDS(ON)=800m@VGS=-4.5V GSM1013E, P-Channel enhancement mode -20V/-0.5A,RDS(ON)=950m@VGS=-2.5V MOSFET, uses Advanced Trench Technology to -20V/-0.4A,RDS(ON)=1250m@VGS=-1.8V provide excellent RDS(ON), low gate charge. Low Offset (Error) Voltage Low-Voltage OperationThese devi

 8.3. Size:987K  globaltech semi
 gsm1012.pdf pdf_icon

GSM1016

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1012, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/0.5A,RDS(ON)=420m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/0.4A,RDS(ON)=560m@VGS=1.8V Low Offset (Error) Voltage These devices are particularly suited for low Low-Voltage Operation

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Datasheet: GP2M020A050N , GP2M020A050X , GP2M020A060N , GP2M023A050N , GSM1012 , GSM1012E , GSM1013 , GSM1013E , STP80NF70 , GSM1023 , GSM1024 , GSM1024E , GSM1026S , GSM1032 , GSM1034 , GSM1072 , GSM1072E .

History: BLP025N10-P

Keywords - GSM1016 MOSFET datasheet

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