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GSM1023 Spec and Replacement


   Type Designator: GSM1023
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.62 Ohm
   Package: SOT-563
 

 GSM1023 substitution

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GSM1023 Specs

 ..1. Size:972K  globaltech semi
 gsm1023.pdf pdf_icon

GSM1023

GSM1023 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1023, P-Channel enhancement mode -20V/-0.45A,RDS(ON)=620m @VGS=-4.5V MOSFET, uses Advanced Trench -20V/-0.35A,RDS(ON)=860m @VGS=-2.5V Technology to provide excellent RDS(ON), low -20V/-0.25A,RDS(ON)=1450m @VGS=-1.8V gate charge. Low Offset (Error) Voltage These devices are particula... See More ⇒

 8.1. Size:1054K  globaltech semi
 gsm1026s.pdf pdf_icon

GSM1023

GSM1026S 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM1026S, N-Channel enhancement mode 60V/0.5A,RDS(ON)=2.4 @VGS=10V MOSFET, uses Advanced Trench 60V/0.2A,RDS(ON)=3.0 @VGS=4.5V Technology to provide excellent RDS(ON), low Super high density cell design for extremely gate charge. low RDS(ON) These devices are particularly suited for low Exception... See More ⇒

 8.2. Size:937K  globaltech semi
 gsm1024e.pdf pdf_icon

GSM1023

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1024E, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m @VGS=4.5V MOSFET, uses Advanced Trench 20V/0.5A,RDS(ON)=420m @VGS=2.5V Technology to provide excellent RDS(ON), low 20V/0.4A,RDS(ON)=560m @VGS=1.8V gate charge. Low Offset (Error) Voltage These devices are particularly suited for low ... See More ⇒

 8.3. Size:940K  globaltech semi
 gsm1024.pdf pdf_icon

GSM1023

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1024, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.5A,RDS(ON)=420m @VGS=2.5V provide excellent RDS(ON), low gate charge. These 20V/0.4A,RDS(ON)=560m @VGS=1.8V devices are particularly suited for low voltage Low Offset (Error) Voltag... See More ⇒

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Detailed specifications: GP2M020A050X , GP2M020A060N , GP2M023A050N , GSM1012 , GSM1012E , GSM1013 , GSM1013E , GSM1016 , 5N60 , GSM1024 , GSM1024E , GSM1026S , GSM1032 , GSM1034 , GSM1072 , GSM1072E , GSM1073 .

Keywords - GSM1023 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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