GSM2301A PDF and Equivalents Search

 

GSM2301A Specs and Replacement

Type Designator: GSM2301A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 223 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: SOT-23

GSM2301A substitution

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GSM2301A datasheet

 ..1. Size:816K  globaltech semi
 gsm2301a.pdf pdf_icon

GSM2301A

20V P-Channel Enhancement Mode MOSFET Product Description Features -20V/-2.6A,RDS(ON)=120m @VGS=-4.5V GSM2301A, P-Channel enhancement mode -20V/-2.2A,RDS(ON)=170m @VGS=-2.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) These devices are particularly suited for low... See More ⇒

 0.1. Size:877K  globaltech semi
 gsm2301as.pdf pdf_icon

GSM2301A

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301AS, P-Channel enhancement mode -20V/-2.4A,RDS(ON)=125m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.0A,RDS(ON)=170m @VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low voltage ... See More ⇒

 7.1. Size:827K  globaltech semi
 gsm2301s.pdf pdf_icon

GSM2301A

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301S, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=120m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.0A,RDS(ON)=170m @VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for These devices are particularly suited for low extremely low RDS (ON) volt... See More ⇒

 7.2. Size:477K  globaltech semi
 gsm2301.pdf pdf_icon

GSM2301A

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=105m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.4A,RDS(ON)=155m @VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volta... See More ⇒

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Detailed specifications: GSM1433 , GSM1443 , GSM1563 , GSM1810 , GSM1912 , GSM1913 , GSM2014 , GSM2301 , IRFB7545 , GSM2301AS , GSM2301S , GSM2302AS , GSM2302S , GSM2303 , GSM2303A , GSM2304 , GSM2304A .

History: STRH40N6

Keywords - GSM2301A MOSFET specs

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