All MOSFET. GSM2303 Datasheet

 

GSM2303 MOSFET. Datasheet pdf. Equivalent

Type Designator: GSM2303

Marking Code: 33*

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.25 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 3.6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 2.5 nC

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 50 pF

Maximum Drain-Source On-State Resistance (Rds): 0.13 Ohm

Package: SOT-23-3L

GSM2303 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GSM2303 Datasheet (PDF)

1.1. gsm2303.pdf Size:914K _update-mosfet

GSM2303
GSM2303

GSM2303 GSM2303 30V P-Channel Enhancement Mode MOSFET Product Description Features  -30V/-3.6A,RDS(ON)=130mΩ@VGS=-10.0V GSM2303, P-Channel enhancement mode  -30V/-3.2A,RDS(ON)=170mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology to  Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON)  Exceptional on-resist

1.2. gsm2303a.pdf Size:914K _update-mosfet

GSM2303
GSM2303

GSM2303A GSM2303A 30V P-Channel Enhancement Mode MOSFET Product Description Features  -30V/-2.8A,RDS(ON)=145mΩ@VGS=-10.0V GSM2303A, P-Channel enhancement mode  -30V/-2.4A,RDS(ON)=180mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology to  Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON)  Exceptional on-res

 4.1. gsm2309a.pdf Size:881K _update-mosfet

GSM2303
GSM2303

GSM2309A 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM2309A, P-Channel enhancement mode  -60V/-1.8A,RDS(ON)=305mΩ@VGS=-10V MOSFET, uses Advanced Trench  -60V/-1.6A,RDS(ON)=320mΩ@VGS=-4.5V Technology to provide excellent RDS(ON), low  Super high density cell design for gate charge. extremely low RDS (ON)  Exceptional on-resistance and maxim

4.2. gsm2309.pdf Size:881K _update-mosfet

GSM2303
GSM2303

GSM2309 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM2309, P-Channel enhancement mode  -60V/-1.8A,RDS(ON)=305mΩ@VGS=-10V MOSFET, uses Advanced Trench  -60V/-1.4A,RDS(ON)=320mΩ@VGS=-4.5V Technology to provide excellent RDS(ON), low  Super high density cell design for gate charge. extremely low RDS (ON)  Exceptional on-resistance and maximum

 4.3. gsm2304s.pdf Size:754K _update-mosfet

GSM2303
GSM2303

GSM2304S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304S, N-Channel enhancement mode  30V/3.6A,RDS(ON)=60mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/2.5A,RDS(ON)=85mΩ@VGS=4.5V provide excellent RDS(ON) ,low gate charge.  Super high density cell design for extremely These devices are particularly suited for low low RDS (O

4.4. gsm2306a.pdf Size:947K _update-mosfet

GSM2303
GSM2303

GSM2306A 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2306A, N-Channel enhancement mode  20V/1.8A,RDS(ON)=280mΩ@VGS=4.5V MOSFET, uses Advanced Trench Technology  20V/1.5A,RDS(ON)=340mΩ@VGS=2.5V to provide excellent RDS(ON), low gate charge.  20V/1.2A,RDS(ON)=750mΩ@VGS=1.8V  Super high density cell design for These devices are particularl

 4.5. gsm2304a.pdf Size:758K _update-mosfet

GSM2303
GSM2303

GSM2304A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304A, N-Channel enhancement mode 30V/2.6A,RDS(ON)=82mΩ@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=108mΩ@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Exce

4.6. gsm2302as.pdf Size:1242K _update-mosfet

GSM2303
GSM2303

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2302AS, N-Channel enhancement mode 20V/2.4A,RDS(ON)=90mΩ@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/2.0A,RDS(ON)=110mΩ@VGS=2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Exceptional on-

4.7. gsm2301.pdf Size:477K _update-mosfet

GSM2303
GSM2303

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301, P-Channel enhancement mode  -20V/-3.0A,RDS(ON)=105mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology to  -20V/-2.4A,RDS(ON)=155mΩ@VGS=-2.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volta

4.8. gsm2301as.pdf Size:877K _update-mosfet

GSM2303
GSM2303

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301AS, P-Channel enhancement mode -20V/-2.4A,RDS(ON)=125mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.0A,RDS(ON)=170mΩ@VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low voltage

4.9. gsm2304as.pdf Size:747K _update-mosfet

GSM2303
GSM2303

GSM2304AS 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304AS, N-Channel enhancement mode 30V/2.4A,RDS(ON)=65mΩ@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=90mΩ@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low SOT-2

4.10. gsm2308.pdf Size:760K _update-mosfet

GSM2303
GSM2303

GSM2308 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM2308, N-Channel enhancement mode  60V/3.6A,RDS(ON)=130mΩ@VGS=10V MOSFET, uses Advanced Trench Technology  60V/2.8A,RDS(ON)=140mΩ@VGS=4.5V to provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

4.11. gsm2301a.pdf Size:816K _update-mosfet

GSM2303
GSM2303

20V P-Channel Enhancement Mode MOSFET Product Description Features  -20V/-2.6A,RDS(ON)=120mΩ@VGS=-4.5V GSM2301A, P-Channel enhancement mode  -20V/-2.2A,RDS(ON)=170mΩ@VGS=-2.5V MOSFET, uses Advanced Trench Technology to  Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) These devices are particularly suited for low

4.12. gsm2306ae.pdf Size:948K _update-mosfet

GSM2303
GSM2303

GSM2306AE 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2306AE, N-Channel enhancement mode  20V/1.8A,RDS(ON)=280mΩ@VGS=4.5V MOSFET, uses Advanced Trench Technology to  20V/1.5A,RDS(ON)=340mΩ@VGS=2.5V provide excellent RDS(ON), low gate charge.  20V/1.2A,RDS(ON)=750mΩ@VGS=1.8V  Super high density cell design for These devices are particula

4.13. gsm2304.pdf Size:963K _update-mosfet

GSM2303
GSM2303

GSM2304 GSM2304 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304, N-Channel enhancement mode 30V/3.6A,RDS(ON)=78mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.8A,RDS(ON)=105mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

4.14. gsm2307a.pdf Size:953K _update-mosfet

GSM2303
GSM2303

GSM2307A GSM2307A 20V P-Channel Enhancement Mode MOSFET Product Description Features  -20V/-1.8A,RDS(ON)=520mΩ@VGS=-4.5V GSM2307A, P-Channel enhancement mode  -20V/-1.5A,RDS(ON)=870mΩ@VGS=-2.5V MOSFET, uses Advanced Trench Technology to  Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON)  Exceptional on-resi

4.15. gsm2301s.pdf Size:827K _update-mosfet

GSM2303
GSM2303

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301S, P-Channel enhancement mode  -20V/-2.8A,RDS(ON)=120mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology to  -20V/-2.0A,RDS(ON)=170mΩ@VGS=-2.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for These devices are particularly suited for low extremely low RDS (ON) volt

4.16. gsm2302s.pdf Size:448K _update-mosfet

GSM2303
GSM2303

GSM2302S GSM2302S 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2302S, N-Channel enhancement mode 20V/3.6A,RDS(ON)=85mΩ@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A,RDS(ON)=100mΩ@VGS=2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

4.17. gsm2308a.pdf Size:813K _update-mosfet

GSM2303
GSM2303

GSM2308A 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM2308A, N-Channel enhancement mode  60V/2.8A,RDS(ON)=135mΩ@VGS=10V MOSFET, uses Advanced Trench Technology  60V/2.0A,RDS(ON)=145mΩ@VGS=4.5V to provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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