All MOSFET. GSM2303A Datasheet

 

GSM2303A MOSFET. Datasheet pdf. Equivalent

Type Designator: GSM2303A

Marking Code: 33*

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.25 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 2.8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 2.5 nC

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 50 pF

Maximum Drain-Source On-State Resistance (Rds): 0.145 Ohm

Package: SOT-23

GSM2303A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GSM2303A Datasheet (PDF)

1.1. gsm2303a.pdf Size:914K _update-mosfet

GSM2303A
GSM2303A

GSM2303A GSM2303A 30V P-Channel Enhancement Mode MOSFET Product Description Features  -30V/-2.8A,RDS(ON)=145mΩ@VGS=-10.0V GSM2303A, P-Channel enhancement mode  -30V/-2.4A,RDS(ON)=180mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology to  Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON)  Exceptional on-res

1.2. gsm2303a.pdf Size:914K _globaltech_semi

GSM2303A
GSM2303A

GSM2303A GSM2303A 30V P-Channel Enhancement Mode MOSFET Product Description Features  -30V/-2.8A,RDS(ON)=145mΩ@VGS=-10.0V GSM2303A, P-Channel enhancement mode  -30V/-2.4A,RDS(ON)=180mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology to  Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON)  Exceptional on-res

 3.1. gsm2303.pdf Size:914K _update-mosfet

GSM2303A
GSM2303A

GSM2303 GSM2303 30V P-Channel Enhancement Mode MOSFET Product Description Features  -30V/-3.6A,RDS(ON)=130mΩ@VGS=-10.0V GSM2303, P-Channel enhancement mode  -30V/-3.2A,RDS(ON)=170mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology to  Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON)  Exceptional on-resist

3.2. gsm2303.pdf Size:914K _globaltech_semi

GSM2303A
GSM2303A

GSM2303 GSM2303 30V P-Channel Enhancement Mode MOSFET Product Description Features  -30V/-3.6A,RDS(ON)=130mΩ@VGS=-10.0V GSM2303, P-Channel enhancement mode  -30V/-3.2A,RDS(ON)=170mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology to  Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON)  Exceptional on-resist

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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