All MOSFET. GSM2304S Datasheet

 

GSM2304S MOSFET. Datasheet pdf. Equivalent

Type Designator: GSM2304S

Marking Code: 4S*

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.25 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 3.6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 2 nC

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 50 pF

Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm

Package: SOT-23-3L

GSM2304S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GSM2304S Datasheet (PDF)

1.1. gsm2304s.pdf Size:754K _update-mosfet

GSM2304S GSM2304S

GSM2304S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304S, N-Channel enhancement mode  30V/3.6A,RDS(ON)=60mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/2.5A,RDS(ON)=85mΩ@VGS=4.5V provide excellent RDS(ON) ,low gate charge.  Super high density cell design for extremely These devices are particularly suited for low low RDS (O

3.1. gsm2304a.pdf Size:758K _update-mosfet

GSM2304S GSM2304S

GSM2304A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304A, N-Channel enhancement mode 30V/2.6A,RDS(ON)=82mΩ@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=108mΩ@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Exce

3.2. gsm2304as.pdf Size:747K _update-mosfet

GSM2304S GSM2304S

GSM2304AS 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304AS, N-Channel enhancement mode 30V/2.4A,RDS(ON)=65mΩ@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=90mΩ@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low SOT-2

 3.3. gsm2304.pdf Size:963K _update-mosfet

GSM2304S GSM2304S

GSM2304 GSM2304 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304, N-Channel enhancement mode 30V/3.6A,RDS(ON)=78mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.8A,RDS(ON)=105mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

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