GSM2304S MOSFET Datasheet: N-Ch, 30V, 3.6A. Full specification with pinout and replacement list

GSM2304S Specs and Replacement

Type Designator: GSM2304S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 50 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOT-23-3L

GSM2304S substitution

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GSM2304S datasheet

..1. Size:754K globaltech semi
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GSM2304S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304S, N-Channel enhancement mode 30V/3.6A,RDS(ON)=60m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.5A,RDS(ON)=85m @VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (O... See More ⇒

7.1. Size:758K globaltech semi
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GSM2304A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304A, N-Channel enhancement mode 30V/2.6A,RDS(ON)=82m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=108m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Exce... See More ⇒

7.2. Size:963K globaltech semi
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GSM2304 GSM2304 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304, N-Channel enhancement mode 30V/3.6A,RDS(ON)=78m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.8A,RDS(ON)=105m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low ... See More ⇒

7.3. Size:747K globaltech semi
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GSM2304AS 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304AS, N-Channel enhancement mode 30V/2.4A,RDS(ON)=65m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=90m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low SOT-2... See More ⇒

Detailed specifications: GSM2301S , GSM2302AS , GSM2302S , GSM2303 , GSM2303A , GSM2304 , GSM2304A , GSM2304AS , AO4468 , GSM2306A , GSM2306AE , GSM2307A , GSM2308 , GSM2308A , GSM2309 , GSM2309A , GSM2311 .