GSM2324 Datasheet. Specs and Replacement

Type Designator: GSM2324

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 22 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.285 Ohm

Package: SOT-23-3L

GSM2324 substitution

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GSM2324 datasheet

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GSM2324

GSM2324 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM2324, N-Channel enhancement mode 100V/2.3A,RDS(ON)=285m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/1.8A,RDS(ON)=295m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for lo... See More ⇒

 0.1. Size:885K  globaltech semi
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GSM2324

GSM2324A 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM2324A, N-Channel enhancement mode 100V/2.3A,RDS(ON)=310m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/1.8A,RDS(ON)=320m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for ... See More ⇒

 8.1. Size:1173K  globaltech semi
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GSM2324

GSM2323 GSM2323 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM2323, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=150m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-3.2A,RDS(ON)=235m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited fo... See More ⇒

 8.2. Size:671K  globaltech semi
 gsm2323a.pdf pdf_icon

GSM2324

GSM2323A 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM2323A, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=155m @VGS=-10V MOSFET, uses Advanced Trench -30V/-2.4A,RDS(ON)=240m @VGS=-4.5V Technology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) These devices are particularly suited for ... See More ⇒

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Detailed specifications: GSM2312A, GSM2317, GSM2318, GSM2318A, GSM2319A, GSM2319AS, GSM2323, GSM2323A, IRFB4227, GSM2324A, GSM2330, GSM2330A, GSM2333A, GSM2336A, GSM2337A, GSM2341, GSM2343A

Keywords - GSM2324 MOSFET specs

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