GSM2336A Datasheet. Specs and Replacement

Type Designator: GSM2336A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: SOT-23

GSM2336A substitution

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GSM2336A datasheet

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GSM2336A

GSM2336A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2336A, N-Channel enhancement mode 30V/1.8A,RDS(ON)=380m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 30V/1.5A,RDS(ON)=480m @VGS=2.5V provide excellent RDS(ON), low gate charge. 30V/1.2A,RDS(ON)=900m @VGS=1.8V Super high density cell design for extremely These devices are p... See More ⇒

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GSM2336A

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GSM2336A

GSM2330A 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM2330A, N-Channel enhancement mode 90V/2.8A,RDS(ON)=200m @VGS=10V MOSFET, uses Advanced Trench Technology 90V/2.0A,RDS(ON)=210m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low... See More ⇒

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GSM2336A

GSM2333A GSM2333A 25V P-Channel Enhancement Mode MOSFET Product Description Features -25V/-2.8A,RDS(ON)=145m @VGS=-10V GSM2333A, P-Channel enhancement mode -25V/-2.4A,RDS(ON)=180m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resis... See More ⇒

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Detailed specifications: GSM2319AS, GSM2323, GSM2323A, GSM2324, GSM2324A, GSM2330, GSM2330A, GSM2333A, 2N7000, GSM2337A, GSM2341, GSM2343A, GSM2354, GSM2367AS, GSM2367S, GSM2376, GSM2379

Keywords - GSM2336A MOSFET specs

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