All MOSFET. GSM3025S Datasheet

 

GSM3025S Datasheet and Replacement


   Type Designator: GSM3025S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TO-252-2L
 

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GSM3025S Datasheet (PDF)

 ..1. Size:770K  globaltech semi
 gsm3025s.pdf pdf_icon

GSM3025S

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3025S, N-Channel enhancement mode 30V/9.0A,RDS(ON)=32m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/7.0A,RDS(ON)=36m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/5.0A,RDS(ON)=42m@VGS=2.5V These devices are particularly suited for low Super high density cell design for e

 9.1. Size:926K  globaltech semi
 gsm3016s.pdf pdf_icon

GSM3025S

GSM3016S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3016S, N-Channel enhancement mode 30V/45A,RDS(ON)=6m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/30A,RDS(ON)=9m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltag

 9.2. Size:983K  globaltech semi
 gsm3050s.pdf pdf_icon

GSM3025S

30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3050S, P-Channel enhancement mode -30V/-9A,RDS(ON)=60m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)=72m@VGS=-4.5V provide excellent RDS(ON), low gate charge. -30V/-5A,RDS(ON)=108m@VGS=-2.5V These devices are particularly suited for low Super high density cell design f

 9.3. Size:1006K  globaltech semi
 gsm3030.pdf pdf_icon

GSM3025S

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3030, N-Channel enhancement mode 30V/12A,RDS(ON)= 30m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)= 40m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

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Datasheet: GSM2604 , GSM2911 , GSM2912 , GSM2913W , GSM3009S , GSM3015S , GSM3016S , GSM3019S , SPP20N60C3 , GSM3030 , GSM3050S , GSM3302W , GSM3306WS , GSM3309WS , GSM3310W , GSM3316W , GSM3326WS .

History: PJS6405 | JMSL0605AGD | ME2308DN-G | AM50N10-18D | GSM4172WS | GSM3050S | AP5N04MI

Keywords - GSM3025S MOSFET datasheet

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