GSM3400AS MOSFET: N-Ch, 30V, 2.8A. Full datasheet with pinout, specifications and replacement transistor list

GSM3400AS Datasheet (PDF)

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30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=50m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.5A,RDS(ON)=55m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=75m@VGS=2.5V These devices are particularly suited for low Super high density cell design for

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GSM3400A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=54m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/1.8A,RDS(ON)=58m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=65m@VGS=2.5V Super high density cell design for These devices are particularly suited for lo

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GSM3400 GSM3400 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400, N-Channel enhancement mode 30V/4.0A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench 30V/3.5A,RDS(ON)=52m@VGS=4.5V Technology to provide excellent RDS(ON), low 30V/2.8A,RDS(ON)=58m@VGS=2.5V gate charge. These devices are particularly Super high density cell des

7.2. Size:921K globaltech semi
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GSM3400S GSM3400S 30V N-Channel Enhancement Mode MOSFET Product Description Features 30V/4.0A,RDS(ON)=42m@VGS=10V GSM3400S, N-Channel enhancement mode 30V/3.0A,RDS(ON)=44m@VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/2.6A,RDS(ON)=50m@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) The

Datasheet: GSM3309WS , GSM3310W , GSM3316W , GSM3326WS , GSM3346W , GSM3366W , GSM3400 , GSM3400A , AON7506 , GSM3400S , GSM3401AS , GSM3401S , GSM3402 , GSM3402A , GSM3403 , GSM3403A , GSM3404 .