GSM3407S Datasheet and Replacement
Type Designator: GSM3407S
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pd ⓘ
- Maximum Power Dissipation: 1.25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 3.6
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 8
nS
Cossⓘ -
Output Capacitance: 95
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075
Ohm
Package:
SOT-23-3L
-
MOSFET ⓘ Cross-Reference Search
GSM3407S Datasheet (PDF)
..1. Size:864K globaltech semi
gsm3407s.pdf 
GSM3407S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3407S, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=75m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-3.2A,RDS(ON)=95m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for
7.1. Size:846K globaltech semi
gsm3407as.pdf
30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3407AS, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=77m@VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-2.4A,RDS(ON)=102m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON)
8.1. Size:891K globaltech semi
gsm3400.pdf
GSM3400 GSM3400 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400, N-Channel enhancement mode 30V/4.0A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench 30V/3.5A,RDS(ON)=52m@VGS=4.5V Technology to provide excellent RDS(ON), low 30V/2.8A,RDS(ON)=58m@VGS=2.5V gate charge. These devices are particularly Super high density cell des
8.2. Size:867K globaltech semi
gsm3404.pdf
GSM3404 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3404, N-Channel enhancement mode 30V/4.0A,RDS(ON)=30m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.2A,RDS(ON)=34m@VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) Volta
8.3. Size:898K globaltech semi
gsm3403a.pdf
GSM3403A GSM3403A 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-2.6A,RDS(ON)=130m@VGS=-10V GSM3403A, P-Channel enhancement mode -30V/-2.2A,RDS(ON)=160m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -30V/-1.2A,RDS(ON)=270m@VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremel
8.4. Size:453K globaltech semi
gsm3402a.pdf
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3402A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=82m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.0A,RDS(ON)=87m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=110m@VGS=2.5V These devices are particularly suited for low Super high density cell design for
8.5. Size:922K globaltech semi
gsm3400a.pdf
GSM3400A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=54m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/1.8A,RDS(ON)=58m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=65m@VGS=2.5V Super high density cell design for These devices are particularly suited for lo
8.6. Size:885K globaltech semi
gsm3406s.pdf
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406S, N-Channel enhancement mode 30V/4.0A,RDS(ON)=40m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.5A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power
8.7. Size:851K globaltech semi
gsm3405.pdf
GSM3405 GSM3405 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3405, P-Channel enhancement mode -30V/-4.0A,RDS(ON)=40m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-2.8A,RDS(ON)=50m@VGS=-4.5V provide excellent RDS(ON) low gate charge. These Super high density cell design for extremely devices are particularly suited for low
8.8. Size:884K globaltech semi
gsm3406.pdf
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406, N-Channel enhancement mode 30V/4.0A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.5A,RDS(ON)=52m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power
8.9. Size:1144K globaltech semi
gsm3402.pdf
GSM3402 GSM3402 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3402, N-Channel enhancement mode 30V/4.0A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench 30V/3.5A,RDS(ON)=80m@VGS=4.5V Technology to provide excellent RDS(ON), low 30V/2.8A,RDS(ON)=100m@VGS=2.5V gate charge. These devices are particularly Super high density cell de
8.10. Size:863K globaltech semi
gsm3406a.pdf
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/1.8A,RDS(ON)=58m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power
8.11. Size:1426K globaltech semi
gsm3401s.pdf
GSM3401S GSM3401S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3401S, P-Channel enhancement mode -30V/-4.0A RDS(ON)=65m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-3.2A RDS(ON)=80m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.0A RDS(ON)=105m@VGS=-2.5V Super high density cell design for extremely These devi
8.12. Size:898K globaltech semi
gsm3403.pdf
GSM3403 GSM3403 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-3.0A,RDS(ON)=125m@VGS=-10V GSM3403, P-Channel enhancement mode -30V/-2.6A,RDS(ON)=155m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -30V/-1.2A,RDS(ON)=220m@VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely
8.13. Size:452K globaltech semi
gsm3400as.pdf
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=50m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.5A,RDS(ON)=55m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=75m@VGS=2.5V These devices are particularly suited for low Super high density cell design for
8.14. Size:877K globaltech semi
gsm3406as.pdf
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=45m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.4A,RDS(ON)=55m@VGS=4.5V provide excellent RDS(ON), low gate charge. These Super high density cell design for extremely devices are particularly suited for low voltage low RDS (ON) powe
8.15. Size:612K globaltech semi
gsm3401as.pdf
30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3401AS, P-Channel enhancement mode -30V/-2.4 RDS(ON)=70m@VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-1.8 RDS(ON)=80m@VGS=-4.5V provide excellent RDS(ON), low gate charge. -30V/-1.2 RDS(ON)=105m@VGS=-2.5V These devices are particularly suited for low Super high density cell de
8.16. Size:921K globaltech semi
gsm3400s.pdf
GSM3400S GSM3400S 30V N-Channel Enhancement Mode MOSFET Product Description Features 30V/4.0A,RDS(ON)=42m@VGS=10V GSM3400S, N-Channel enhancement mode 30V/3.0A,RDS(ON)=44m@VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/2.6A,RDS(ON)=50m@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) The
Datasheet: GSM3403A
, GSM3404
, GSM3405
, GSM3406
, GSM3406A
, GSM3406AS
, GSM3406S
, GSM3407AS
, 75N75
, GSM3410
, GSM3411
, GSM3413
, GSM3413A
, GSM3414A
, GSM3414S
, GSM3415
, GSM3416
.
History: 2SK3089B
| AONP36320
| JCS2N60CB
| IRF2804SPBF
| 4N65TF
| AONR32314
| 2SK293
Keywords - GSM3407S MOSFET datasheet
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