All MOSFET. GSM3415 Datasheet

 

GSM3415 Datasheet and Replacement


   Type Designator: GSM3415
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOT-23-3L
 

 GSM3415 substitution

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GSM3415 Datasheet (PDF)

 ..1. Size:920K  globaltech semi
 gsm3415.pdf pdf_icon

GSM3415

GSM3415 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3415, P-Channel enhancement mode -20V/-4.9A,RDS(ON)=45m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-3.4A,RDS(ON)=58m@VGS=-2.5V provide excellent RDS(ON) ,low gate charge. -20V/-2.2A,RDS(ON)=85m@VGS=-1.8V Super high density cell design for extremely These devic

 8.1. Size:875K  globaltech semi
 gsm3413.pdf pdf_icon

GSM3415

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3413, P-Channel enhancement mode -20V/-3.2A,RDS(ON)=100m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.6A,RDS(ON)=130m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-1.5A,RDS(ON)=195m@VGS=-1.8V Super high density cell design for extremely These devices are particularly su

 8.2. Size:1106K  globaltech semi
 gsm3416.pdf pdf_icon

GSM3415

20V N-Channel Enhancement Mode MOSFET Product Description Features 20V/4.0A,RDS(ON)=26m@VGS=4.5V GSM3416, N-Channel enhancement mode 20V/3.2A,RDS(ON)=30m@VGS=2.5V MOSFET, uses Advanced Trench Technology to 20V/2.8A,RDS(ON)=36m@VGS=1.8V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

 8.3. Size:820K  globaltech semi
 gsm3413a.pdf pdf_icon

GSM3415

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3413A, P-Channel enhancement mode -20V/-2.6A,RDS(ON)=110m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.2A,RDS(ON)=150m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-1.2A,RDS(ON)=205m@VGS=-1.8V Super high density cell design for extremely These devices are par

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Datasheet: GSM3407AS , GSM3407S , GSM3410 , GSM3411 , GSM3413 , GSM3413A , GSM3414A , GSM3414S , 8N60 , GSM3416 , GSM3424 , GSM3424A , GSM3425 , GSM3426 , GSM3430W , GSM3432 , GSM3434W .

History: OSG60R070KT3ZF | CS6N60A4D | OSG60R092HT3ZF | PJA3415

Keywords - GSM3415 MOSFET datasheet

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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