GSM3424A
MOSFET. Datasheet pdf. Equivalent
Type Designator: GSM3424A
Marking Code: 24*
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 3.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 2.3
nC
trⓘ - Rise Time: 12
nS
Cossⓘ -
Output Capacitance: 40
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085
Ohm
Package:
SOT-23
GSM3424A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GSM3424A
Datasheet (PDF)
..1. Size:772K globaltech semi
gsm3424a.pdf
GSM3424A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3424A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=85m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.0A,RDS(ON)=95m@VGS=4.5V provide excellent RDS(ON) ,low gate charge. 30V/1.5A,RDS(ON)=265m@VGS=4.5V Super high density cell design for extremely These devices are
7.1. Size:883K globaltech semi
gsm3424.pdf
GSM3424 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3424, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=85m@VGS=4.5V provide excellent RDS(ON) ,low gate charge. 30V/2.2A,RDS(ON)=155m@VGS=2.5V Super high density cell design for extremely These devices are pa
8.1. Size:883K globaltech semi
gsm3426.pdf
GSM3426 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM3426, N-Channel enhancement mode 20V/4.0A,RDS(ON)=36m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A,RDS(ON)=40m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=52m@VGS=1.8V Super high density cell design for extremely These devices are partic
8.2. Size:912K globaltech semi
gsm3425.pdf
GSM3425 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3425, P-Channel enhancement mode -20V/-4.0A,RDS(ON)=56m@VGS=4.5V MOSFET, uses Advanced Trench Technology to -20V/-3.2A,RDS(ON)=70m@VGS=2.5V provide excellent RDS(ON), low gate charge. -20V/-2.8A,RDS(ON)=96m@VGS=1.8V Super high density cell design for extremely These devices are
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