GSM3436 Datasheet. Specs and Replacement

Type Designator: GSM3436

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm

Package: TSOP-6

GSM3436 substitution

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GSM3436 datasheet

 ..1. Size:895K  globaltech semi
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GSM3436

GSM3436 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3436, N-Channel enhancement mode 30V/3.6A,RDS(ON)=72m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=82m @VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=160m @VGS=2.5V Super high density cell design for extremely These devices are partic... See More ⇒

 8.1. Size:1009K  globaltech semi
 gsm3434w.pdf pdf_icon

GSM3436

GSM3434W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM3434W, N-Channel enhancement mode 100V/3.2A,RDS(ON)=170m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/2.6A,RDS(ON)=185m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Ex... See More ⇒

 8.2. Size:895K  globaltech semi
 gsm3432.pdf pdf_icon

GSM3436

GSM3432 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3432, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=80m @VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=100m @VGS=2.5V Super high density cell design for extremely These devices are partic... See More ⇒

 8.3. Size:842K  globaltech semi
 gsm3430w.pdf pdf_icon

GSM3436

GSM3430W 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM3430W, N-Channel enhancement mode 90V/4.0A,RDS(ON)=150m @VGS=10V MOSFET, uses Advanced Trench Technology to 90V/3.2A,RDS(ON)=155m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low... See More ⇒

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Detailed specifications: GSM3416, GSM3424, GSM3424A, GSM3425, GSM3426, GSM3430W, GSM3432, GSM3434W, IRFZ46N, GSM3446, GSM3452, GSM3454, GSM3456, GSM3456S, GSM3458, GSM3458BW, GSM3459

Keywords - GSM3436 MOSFET specs

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