All MOSFET. GSM3456 Datasheet

 

GSM3456 Datasheet and Replacement


   Type Designator: GSM3456
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TSOP-6
 

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GSM3456 Datasheet (PDF)

 ..1. Size:841K  globaltech semi
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GSM3456

GSM3456 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3456, N-Channel enhancement mode 30V/5.6A,RDS(ON)=40m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/4.2A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 0.1. Size:868K  globaltech semi
 gsm3456s.pdf pdf_icon

GSM3456

GSM3456S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3456S, N-Channel enhancement mode 30V/5.4A,RDS(ON)=40m@VGS=10.0V MOSFET, uses Advanced Trench Technology to 30V/4.8A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

 8.1. Size:882K  globaltech semi
 gsm3458.pdf pdf_icon

GSM3456

GSM3458 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM3458, N-Channel enhancement mode 60V/5.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/3.8A,RDS(ON)=66m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 8.2. Size:966K  globaltech semi
 gsm3459.pdf pdf_icon

GSM3456

GSM3459 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM3459, P-Channel enhancement mode -60V/-4.8A,RDS(ON)=128m@VGS=-10V MOSFET, uses Advanced Trench Technology to -60V/-3.6A,RDS(ON)=138m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

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Datasheet: GSM3426 , GSM3430W , GSM3432 , GSM3434W , GSM3436 , GSM3446 , GSM3452 , GSM3454 , IRFB7545 , GSM3456S , GSM3458 , GSM3458BW , GSM3459 , GSM3460 , GSM3466 , GSM3481S , GSM3484 .

History: KI001PW | 2SJ492-ZJ | 2SK905 | GSM3452 | IRFF9120 | WST4045 | SL2306

Keywords - GSM3456 MOSFET datasheet

 GSM3456 cross reference
 GSM3456 equivalent finder
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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