GSM3485 Datasheet and Replacement. Cross Reference Search

GSM3485 Datasheet (PDF)

..1. Size:907K globaltech semi
gsm3485.pdf pdf_icon

GSM3485 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3485, P-Channel enhancement mode -30V/-12A,RDS(ON)=28m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-10A,RDS(ON)=37m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

8.1. Size:939K globaltech semi
gsm3484s.pdf pdf_icon

GSM3484S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3484S, N-Channel enhancement mode 30V/30A,RDS(ON)=13m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/18A,RDS(ON)=18m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

8.2. Size:872K globaltech semi
gsm3484.pdf pdf_icon

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3484, N-Channel enhancement mode 30V/12A,RDS(ON)=15m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=18m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power ma

8.3. Size:880K globaltech semi
gsm3481s.pdf pdf_icon

GSM3481S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3481S, P-Channel enhancement mode -30V/-5.4A,RDS(ON)=62m@VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=90m@VGS=-4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suit

Datasheet: GSM3458 , GSM3458BW , GSM3459 , GSM3460 , GSM3466 , GSM3481S , GSM3484 , GSM3484S , IRFP064N , GSM3497 , GSM3679S , GSM3804 , GSM3806W , GSM3814W , GSM3911W , GSM3981 , GSM3993 .