All MOSFET. GSM4435S Datasheet

 

GSM4435S Datasheet and Replacement


   Type Designator: GSM4435S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: SOP-8P
 

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GSM4435S Datasheet (PDF)

 ..1. Size:1035K  globaltech semi
 gsm4435s.pdf pdf_icon

GSM4435S

GSM4435S GSM4435S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435S, P-Channel enhancement mode -30V/-9A,RDS(ON)=18m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)=26m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

 7.1. Size:1086K  globaltech semi
 gsm4435ws.pdf pdf_icon

GSM4435S

GSM4435WS GSM4435WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435WS, P-Channel enhancement mode -30V/-9A,RDS(ON)= 17m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)= 24m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

 7.2. Size:981K  globaltech semi
 gsm4435w.pdf pdf_icon

GSM4435S

GSM4435W 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435W, P-Channel enhancement mode -30V/-10A,RDS(ON)=24m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)=35m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low SOP-

 7.3. Size:776K  globaltech semi
 gsm4435.pdf pdf_icon

GSM4435S

GSM4435 GSM4435 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435, P-Channel enhancement mode -30V/-10A,RDS(ON)= 28m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7.0A,RDS(ON)= 37m@VGS=-4.5V provide excellent RDS(ON), low gate charge. These Super high density cell design for extremely devices are particularly suited for low voltage lo

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Datasheet: PHP36N06E , PHB36N06E , FTD36N06N , SFP65N06 , IPI16CN10N , GSM4424 , GSM4424W , GSM4435 , IRF4905 , GSM4435W , GSM4435WS , GSM4440 , GSM4440W , GSM4447 , GSM4486 , GSM4510S , GSM4516 .

Keywords - GSM4435S MOSFET datasheet

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