All MOSFET. GSM4516 Datasheet

 

GSM4516 MOSFET. Datasheet pdf. Equivalent


   Type Designator: GSM4516
   Marking Code: 4516
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.8 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: SOP-8

 GSM4516 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GSM4516 Datasheet (PDF)

 ..1. Size:1304K  globaltech semi
 gsm4516.pdf

GSM4516 GSM4516

GSM4516 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4516, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/8A,RDS(ON)=15m@VGS=10V provide excellent RDS(ON), low gate charge. 30V/6A,RDS(ON)=20m@VGS=4.5V P-Channel These devices are particularly suited for low -30V/-8A,RDS(ON)=28m@VGS=-10V voltage power man

 0.1. Size:1190K  globaltech semi
 gsm4516w.pdf

GSM4516 GSM4516

GSM4516W 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4516W, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/8A,RDS(ON)=15m@VGS=10V provide excellent RDS(ON), low gate charge. 30V/6A,RDS(ON)=20m@VGS=4.5V P-Channel These devices are particularly suited for low -30V/-8A,RDS(ON)=28m@VGS=-10V voltag

 8.1. Size:1077K  globaltech semi
 gsm4510s.pdf

GSM4516 GSM4516

GSM4510S 100V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4510S, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 100V/6.8A,RDS(ON)=150m@VGS=10V provide excellent RDS(ON), low gate charge. 100V/5.6A,RDS(ON)=165m@VGS=4.5V P-Channel These devices are particularly suited for low -100V/-6.2A,RDS(ON)=198m@VGS=

 9.1. Size:1207K  globaltech semi
 gsm4559.pdf

GSM4516 GSM4516

GSM4559 60V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4559, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 60V/6.8A,RDS(ON)=42m@VGS=10V provide excellent RDS(ON), low gate charge. 60V/5.6A,RDS(ON)=50m@VGS=4.5V P-Channel These devices are particularly suited for low -60V/-4.0A,RDS(ON)=100m@VGS=-10V v

 9.2. Size:1497K  globaltech semi
 gsm4599w.pdf

GSM4516 GSM4516

GSM4599W 40V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4599W, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 40V/8A,RDS(ON)=22m@VGS=10V provide excellent RDS(ON), low gate charge. 40V/6A,RDS(ON)=28m@VGS=4.5V P-Channel These devices are particularly suited for low -40V/-7.2A,RDS(ON)=42m@VGS=-10V volt

 9.3. Size:1224K  globaltech semi
 gsm4535.pdf

GSM4516 GSM4516

40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4535, P-Channel enhancement mode -40V/-6.2A,RDS(ON)= 35m@VGS= -10V MOSFET, uses Advanced Trench Technology to -40V/-5.2A,RDS(ON)= 50m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volt

 9.4. Size:1320K  globaltech semi
 gsm4539ws.pdf

GSM4516 GSM4516

GSM4539WS 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4539WS, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/5.8A,RDS(ON)=36m@VGS=10V provide excellent RDS(ON), low gate charge. 30V/5.5A,RDS(ON)=46m@VGS=4.5V P-Channel These devices are particularly suited for low -30V/-5.4A,RDS(ON)=62m@VGS=-10V

 9.5. Size:430K  globaltech semi
 gsm4546.pdf

GSM4516 GSM4516

GSM4546 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4546, N-Channel enhancement mode 40V/6.8A,RDS(ON)=52m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/5.6A,RDS(ON)=70m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.6. Size:1190K  globaltech semi
 gsm4535w.pdf

GSM4516 GSM4516

GSM4535W 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4535W, P-Channel enhancement mode -40V/-6.2A,RDS(ON)= 35m@VGS= -10V OSFET, uses Advanced Trench Technology to -40V/-5.2A,RDS(ON)= 50m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

 9.7. Size:1577K  globaltech semi
 gsm4599.pdf

GSM4516 GSM4516

GSM4599 40V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4599, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 40V/8A,RDS(ON)=22m@VGS=10V provide excellent RDS(ON), low gate charge. 40V/6A,RDS(ON)=36m@VGS=4.5V P-Channel These devices are particularly suited for low -40V/-7.2A,RDS(ON)=37m@VGS=-10V voltage power m

 9.8. Size:1320K  globaltech semi
 gsm4539s.pdf

GSM4516 GSM4516

GSM4539S 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4539S, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/5.8A,RDS(ON)=40m@VGS=10V provide excellent RDS(ON), low gate charge. 30V/5.5A,RDS(ON)=50m@VGS=4.5V P-Channel These devices are particularly suited for low -30V/-5.4A,RDS(ON)=65m@VGS=-10V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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