All MOSFET. SML40B27 Datasheet

 

SML40B27 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SML40B27
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 27 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 138 nC
   Cossⓘ - Output Capacitance: 3350 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO247

 SML40B27 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SML40B27 Datasheet (PDF)

 ..1. Size:21K  semelab
sml40b27.pdf

SML40B27
SML40B27

SML40B27TO247AD Package Outline.Dimensions in mm (inches)4.69 (0.185) 15.49 (0.610) NCHANNEL5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)ENHANCEMENT MODEHIGH VOLTAGEPOWER MOSFETS3.55 (0.140)3.81 (0.150)1 2 3 VDSS 400V1.65 (0.065)2.13 (0.084)0.40 (0.016)ID(cont) 27A0.79 (0.031) 2.87 (0.113)3.12 (0.123)1.01 (0.040)1.40 (0.055) RDS(on) 0.1602.21

 7.1. Size:21K  semelab
sml40b28.pdf

SML40B27
SML40B27

SML40B28TO247AD Package Outline.Dimensions in mm (inches)4.69 (0.185) 15.49 (0.610) NCHANNEL5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)ENHANCEMENT MODEHIGH VOLTAGEPOWER MOSFETS3.55 (0.140)3.81 (0.150)1 2 3 VDSS 400V1.65 (0.065)2.13 (0.084)0.40 (0.016)ID(cont) 28A0.79 (0.031) 2.87 (0.113)3.12 (0.123)1.01 (0.040)1.40 (0.055) RDS(on) 0.1402.21

 8.1. Size:21K  semelab
sml40b37.pdf

SML40B27
SML40B27

SML40B37TO247AD Package Outline.Dimensions in mm (inches)4.69 (0.185) 15.49 (0.610) NCHANNEL5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)ENHANCEMENT MODEHIGH VOLTAGEPOWER MOSFETS3.55 (0.140)3.81 (0.150)1 2 3 VDSS 400V1.65 (0.065)2.13 (0.084)0.40 (0.016)ID(cont) 37A0.79 (0.031) 2.87 (0.113)3.12 (0.123)1.01 (0.040)1.40 (0.055) RDS(on) 0.1202.21

 9.1. Size:22K  semelab
sml40h19.pdf

SML40B27
SML40B27

SML40H22TO258 Package Outline.Dimensions in mm (inches)6.86 (0.270)NCHANNEL6.09 (0.240)17.65 (0.695)17.39 (0.685)1.14 (0.707)ENHANCEMENT MODE0.88 (0.035)HIGH VOLTAGEPOWER MOSFETS4.19 (0.165)3.94 (0.155)Dia.1 2 3VDSS 400VID(cont) 22ARDS(on) 0.1805.08 (0.200) 3.56 (0.140)BSC BSC Faster Switching1.65 (0.065)1.39 (0.055) Lower Le

 9.2. Size:23K  semelab
sml40j53.pdf

SML40B27
SML40B27

SML40J53SOT227 Package Outline.Dimensions in mm (inches)11.8 (0.463)12.2 (0.480)31.5 (1.240)NCHANNEL31.7 (1.248)8.9 (0.350)7.8 (0.307)4.1 (0.161 )8.2 (0.322) W = 9.6 (0.378)Hex Nut M 44.3 (0.169 )ENHANCEMENT MODE(4 places)4.8 (0.187)H =4.9 (0.193)1 2(4 places) HIGH VOLTAGERPOWER MOSFETS4.0 (0.157) 0.75 (0.030)4.2 (0.165) 0.85 (0.033)4 3V

 9.3. Size:10K  semelab
sml4003.pdf

SML40B27

SML4003Dimensions in mm (inches). Bipolar NPNP Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPNP Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 600V dia.IC = 4A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100)

 9.4. Size:20K  semelab
sml40l57.pdf

SML40B27
SML40B27

SML40L57TO264AA Package Outline.Dimensions in mm (inches)1.80 (0.071)2.01 (0.079) NCHANNEL4.60 (0.181) 19.51 (0.768)5.21 (0.205) 26.49 (0.807)3.10 (0.122)ENHANCEMENT MODE3.48 (0.137)HIGH VOLTAGEPOWER MOSFETSVDSS 400V1 2 32.29 (0.090)ID(cont) 57A2.69 (0.106)2.79 (0.110)3.18 (0.125)RDS(on) 0.0700.48 (0.019) 0.76 (0.030)0.84 (0.033) 1.30 (0.051)

 9.5. Size:19K  semelab
sml40h28.pdf

SML40B27
SML40B27

SML40H28TO258 Package Outline.Dimensions in mm (inches)6.86 (0.270)NCHANNEL6.09 (0.240)17.65 (0.695)17.39 (0.685)1.14 (0.707)ENHANCEMENT MODE0.88 (0.035)HIGH VOLTAGEPOWER MOSFETS4.19 (0.165)3.94 (0.155)Dia.1 2 3VDSS 400VID(cont) 28ARDS(on) 0.1405.08 (0.200) 3.56 (0.140)BSC BSC Faster Switching1.65 (0.065)1.39 (0.055) Lower Le

 9.6. Size:366K  semelab
sml3520an sml3525an sml4020an.pdf

SML40B27
SML40B27

 9.7. Size:20K  semelab
sml40a26.pdf

SML40B27
SML40B27

SML40A26TO3 Package Outline.Dimensions in mm (inches)NCHANNEL25.15 (0.99) ENHANCEMENT MODE6.35 (0.25)26.67 (1.05)9.15 (0.36)10.67 (0.42)HIGH VOLTAGE11.18 (0.44) 1.52 (0.06)3.43 (0.135)POWER MOSFETSVDSS 400V1 2ID(cont) 25.5A3(case)RDS(on) 0.1503.84 (0.151)4.09 (0.161)7.92 (0.312)12.70 (0.50) Faster Switching Lower LeakagePin 1

 9.8. Size:26K  semelab
sml40h22.pdf

SML40B27
SML40B27

SML40H22TO258 Package Outline.Dimensions in mm (inches)6.86 (0.270)NCHANNEL6.09 (0.240)17.65 (0.695)17.39 (0.685)1.14 (0.707)ENHANCEMENT MODE0.88 (0.035)HIGH VOLTAGEPOWER MOSFETS4.19 (0.165)3.94 (0.155)Dia.1 2 3VDSS 400VID(cont) 22ARDS(on) 0.1805.08 (0.200) 3.56 (0.140)BSC BSC Faster Switching1.65 (0.065)1.39 (0.055) Lower Le

 9.9. Size:23K  semelab
sml40j93.pdf

SML40B27
SML40B27

SML40J93SOT227 Package Outline.Dimensions in mm (inches)11.8 (0.463)12.2 (0.480)31.5 (1.240)NCHANNEL31.7 (1.248)8.9 (0.350)7.8 (0.307)4.1 (0.161 )8.2 (0.322) W = 9.6 (0.378)Hex Nut M 44.3 (0.169 )ENHANCEMENT MODE(4 places)4.8 (0.187)H =4.9 (0.193)1 2(4 places) HIGH VOLTAGERPOWER MOSFETS4.0 (0.157) 0.75 (0.030)4.2 (0.165) 0.85 (0.033)4 3V

 9.10. Size:11K  semelab
sml4017a.pdf

SML40B27

SML4017ADimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 200V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed i

 9.11. Size:11K  semelab
sml4017.pdf

SML40B27

SML4017Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 200V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

Datasheet: SML4065BN , SML4065CN , SML4065GN , SML4080AN , SML4080BN , SML4080CN , SML4080GN , SML40A26 , 5N60 , SML40B28 , SML40B37 , SML40C15N , SML40H22 , SML40H28 , SML40J53 , SML40J93 , SML40L57 .

History: NDP6051

 

 
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