All MOSFET. GSM4804 Datasheet

 

GSM4804 Datasheet and Replacement


   Type Designator: GSM4804
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
   Package: TO-252
 

 GSM4804 substitution

   - MOSFET ⓘ Cross-Reference Search

 

GSM4804 Datasheet (PDF)

 ..1. Size:723K  globaltech semi
 gsm4804.pdf pdf_icon

GSM4804

40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4804, N-Channel enhancement mode 40V/16A,RDS(ON)= 48m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/10A,RDS(ON)= 70m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 9.1. Size:747K  globaltech semi
 gsm4822ws.pdf pdf_icon

GSM4804

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4822WS, N-Channel enhancement mode 30V/6.0A,RDS(ON)=34m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.0A,RDS(ON)=44m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage powe

 9.2. Size:826K  globaltech semi
 gsm4896.pdf pdf_icon

GSM4804

GSM4896 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4896, N-Channel enhancement mode 100V/6.8A,RDS(ON)=115m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/5.6A,RDS(ON)=125m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for lo

 9.3. Size:813K  globaltech semi
 gsm4822s.pdf pdf_icon

GSM4804

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4822S, N-Channel enhancement mode 30V/6.0A,RDS(ON)=30m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.0A,RDS(ON)=42m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

SHOW MORE

Datasheet: GSM4539WS , GSM4546 , GSM4559 , GSM4599 , GSM4599W , GSM4634WS , GSM4637 , GSM4637W , IRF1407 , GSM4822S , GSM4822WS , GSM4850WS , GSM4874WS , GSM4896 , GSM4900W , GSM4906 , GSM4922W .

History: VB562K | STL35N15F3 | SI2324DS-T1-GE3 | PNMT8N1 | SDF450 | NDP410B | IRHNA57260

Keywords - GSM4804 MOSFET datasheet

 GSM4804 cross reference
 GSM4804 equivalent finder
 GSM4804 lookup
 GSM4804 substitution
 GSM4804 replacement

 

 
Back to Top

 


 
.