All MOSFET. GSM4850WS Datasheet

 

GSM4850WS Datasheet and Replacement


   Type Designator: GSM4850WS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: SOP-8P
 

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GSM4850WS Datasheet (PDF)

 ..1. Size:872K  globaltech semi
 gsm4850ws.pdf pdf_icon

GSM4850WS

GSM4850WS 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4850WS, N-Channel enhancement mode 60V/8.5A,RDS(ON)=22m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/7.2A,RDS(ON)=24m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.1. Size:747K  globaltech semi
 gsm4822ws.pdf pdf_icon

GSM4850WS

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4822WS, N-Channel enhancement mode 30V/6.0A,RDS(ON)=34m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.0A,RDS(ON)=44m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage powe

 9.2. Size:826K  globaltech semi
 gsm4896.pdf pdf_icon

GSM4850WS

GSM4896 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4896, N-Channel enhancement mode 100V/6.8A,RDS(ON)=115m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/5.6A,RDS(ON)=125m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for lo

 9.3. Size:723K  globaltech semi
 gsm4804.pdf pdf_icon

GSM4850WS

40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4804, N-Channel enhancement mode 40V/16A,RDS(ON)= 48m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/10A,RDS(ON)= 70m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

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Datasheet: GSM4599 , GSM4599W , GSM4634WS , GSM4637 , GSM4637W , GSM4804 , GSM4822S , GSM4822WS , BS170 , GSM4874WS , GSM4896 , GSM4900W , GSM4906 , GSM4922W , GSM4924 , GSM4924W , GSM4925 .

History: AFN7002DS | ME1303AT3-G | NCE50NF180I | GSM4804 | ME13N10A | MTN2302V3 | MTN22N20J3

Keywords - GSM4850WS MOSFET datasheet

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