GSM4900W Datasheet and Replacement
Type Designator: GSM4900W
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 6.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 6
nS
Cossⓘ -
Output Capacitance: 50
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.115
Ohm
Package:
SOP-8P
- MOSFET Cross-Reference Search
GSM4900W Datasheet (PDF)
..1. Size:859K globaltech semi
gsm4900w.pdf 
GSM4900W 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4900W, N-Channel enhancement mode 60V/6.8A,RDS(ON)=115m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=140m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
8.1. Size:731K globaltech semi
gsm4906.pdf
40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4906, N-Channel enhancement mode 40V/6.8A,RDS(ON)=52m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/5.6A,RDS(ON)=70m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power
9.1. Size:939K globaltech semi
gsm4998.pdf
GSM4998 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4998, N-Channel enhancement mode 100V/5.6A,RDS(ON)=130m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/4.2A,RDS(ON)=145m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for lo
9.2. Size:438K globaltech semi
gsm4953s.pdf
30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4953S, P-Channel enhancement mode -30V/-5.4A,RDS(ON)=52m@VGS= -10V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=76m@VGS= - 4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volt
9.3. Size:1468K globaltech semi
gsm4924.pdf
40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4924, N-Channel enhancement mode 40V/8A,RDS(ON)= 24m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/6A,RDS(ON)= 48m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power ma
9.4. Size:834K globaltech semi
gsm4925ws.pdf
GSM4925WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925WS, P-Channel enhancement mode -30V/-8.0A,RDS(ON)= 18m@VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-6.0A,RDS(ON)= 26m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suite
9.5. Size:719K globaltech semi
gsm4925.pdf
GSM4925 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925, P-Channel enhancement mode -30V/-7.2A,RDS(ON)= 28m@VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-5.8A,RDS(ON)= 37m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited fo
9.6. Size:438K globaltech semi
gsm4946.pdf
60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4946, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power
9.7. Size:1070K globaltech semi
gsm4936ws.pdf
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4936WS, N-Channel enhancement mode 30V/5.8A,RDS(ON)=36m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.5A,RDS(ON)=46m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices areW particularly suited for low low RDS (ON) voltage pow
9.8. Size:916K globaltech semi
gsm4998w.pdf
GSM4998W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4998W, N-Channel enhancement mode 100V/5.6A,RDS(ON)=120m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/4.2A,RDS(ON)=130m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for
9.9. Size:801K globaltech semi
gsm4997.pdf
GSM4997 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM4997, N-Channel enhancement mode 90V/6.8A,RDS(ON)=68m@VGS=10V MOSFET, uses Advanced Trench Technology to 90V/5.6A,RDS(ON)=75m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
9.10. Size:1478K globaltech semi
gsm4924w.pdf
GSM4924W 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4924W, N-Channel enhancement mode 40V/8A,RDS(ON)=22m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/6A,RDS(ON)=28m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low S
9.11. Size:432K globaltech semi
gsm4946w.pdf
GSM4946W 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4946W, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=48m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
9.12. Size:944K globaltech semi
gsm4953ws.pdf
GSM4953WS GSM4953WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4953WS, P-Channel enhancement mode -30V/-5.4A,RDS(ON)=60m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=80m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particula
9.13. Size:833K globaltech semi
gsm4925s.pdf
GSM4925S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925S, P-Channel enhancement mode -30V/-7.5A,RDS(ON)= 18m@VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-6.0A,RDS(ON)= 26m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited
9.14. Size:408K globaltech semi
gsm4946bw.pdf
GSM4946BW 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4946BW, N-Channel enhancement mode 60V/6.8A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=65m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
9.15. Size:1059K globaltech semi
gsm4936s.pdf
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4936S, N-Channel enhancement mode 30V/5.8A,RDS(ON)=30m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.5A,RDS(ON)=42m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power
9.16. Size:823K globaltech semi
gsm4925w.pdf
GSM4925W 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925W, P-Channel enhancement mode -30V/-7.2A,RDS(ON)= 30m@VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-5.8A,RDS(ON)= 36m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited
9.17. Size:830K globaltech semi
gsm4948.pdf
GSM4948 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM4948, P-Channel enhancement mode -60V/-4.0A,RDS(ON)= 100m@VGS= -10V OSFET, uses Advanced Trench Technology to -60V/-3.0A,RDS(ON)= 120m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited
9.18. Size:846K globaltech semi
gsm4922w.pdf
GSM4922W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4922W, N-Channel enhancement mode 100V/2.0A,RDS(ON)=290m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/1.5A,RDS(ON)=300m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for
9.19. Size:831K globaltech semi
gsm4996.pdf
GSM4996 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM4996, N-Channel enhancement mode 90V/7.6A,RDS(ON)=68m@VGS=10V MOSFET, uses Advanced Trench Technology to 90V/6.8A,RDS(ON)=75m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
History: 20N03L-TO252
| 2N6762JTXV
Keywords - GSM4900W MOSFET datasheet
GSM4900W cross reference
GSM4900W equivalent finder
GSM4900W lookup
GSM4900W substitution
GSM4900W replacement
