GSM4925W Datasheet. Specs and Replacement

Type Designator: GSM4925W

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SOP-8

GSM4925W substitution

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GSM4925W datasheet

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GSM4925W

GSM4925W 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925W, P-Channel enhancement mode -30V/-7.2A,RDS(ON)= 30m @VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-5.8A,RDS(ON)= 36m @VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited ... See More ⇒

 0.1. Size:834K  globaltech semi
 gsm4925ws.pdf pdf_icon

GSM4925W

GSM4925WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925WS, P-Channel enhancement mode -30V/-8.0A,RDS(ON)= 18m @VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-6.0A,RDS(ON)= 26m @VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suite... See More ⇒

 7.1. Size:719K  globaltech semi
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GSM4925W

GSM4925 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925, P-Channel enhancement mode -30V/-7.2A,RDS(ON)= 28m @VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-5.8A,RDS(ON)= 37m @VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited fo... See More ⇒

 7.2. Size:833K  globaltech semi
 gsm4925s.pdf pdf_icon

GSM4925W

GSM4925S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925S, P-Channel enhancement mode -30V/-7.5A,RDS(ON)= 18m @VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-6.0A,RDS(ON)= 26m @VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited ... See More ⇒

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Detailed specifications: GSM4896, GSM4900W, GSM4906, GSM4922W, GSM4924, GSM4924W, GSM4925, GSM4925S, 18N50, GSM4925WS, GSM4936S, GSM4936WS, GSM4946, GSM4946BW, GSM4946W, GSM4948, GSM4953S

Keywords - GSM4925W MOSFET specs

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