GSM4946BW Datasheet and Replacement. Cross Reference Search

GSM4946BW Datasheet (PDF)

..1. Size:408K globaltech semi
gsm4946bw.pdf pdf_icon

GSM4946BW 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4946BW, N-Channel enhancement mode 60V/6.8A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=65m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

7.1. Size:438K globaltech semi
gsm4946.pdf pdf_icon

60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4946, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

7.2. Size:432K globaltech semi
gsm4946w.pdf pdf_icon

GSM4946W 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4946W, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=48m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

8.1. Size:830K globaltech semi
gsm4948.pdf pdf_icon

GSM4948 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM4948, P-Channel enhancement mode -60V/-4.0A,RDS(ON)= 100m@VGS= -10V OSFET, uses Advanced Trench Technology to -60V/-3.0A,RDS(ON)= 120m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

Datasheet: GSM4924W , GSM4925 , GSM4925S , GSM4925W , GSM4925WS , GSM4936S , GSM4936WS , GSM4946 , AON6380 , GSM4946W , GSM4948 , GSM4953S , GSM4953WS , GSM4996 , GSM4997 , GSM4998 , GSM4998W .