All MOSFET. GSM4997 Datasheet

 

GSM4997 Datasheet and Replacement


   Type Designator: GSM4997
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 90 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm
   Package: SOP-8P
 

 GSM4997 substitution

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GSM4997 Datasheet (PDF)

 ..1. Size:801K  globaltech semi
 gsm4997.pdf pdf_icon

GSM4997

GSM4997 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM4997, N-Channel enhancement mode 90V/6.8A,RDS(ON)=68m@VGS=10V MOSFET, uses Advanced Trench Technology to 90V/5.6A,RDS(ON)=75m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 8.1. Size:939K  globaltech semi
 gsm4998.pdf pdf_icon

GSM4997

GSM4998 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4998, N-Channel enhancement mode 100V/5.6A,RDS(ON)=130m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/4.2A,RDS(ON)=145m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for lo

 8.2. Size:916K  globaltech semi
 gsm4998w.pdf pdf_icon

GSM4997

GSM4998W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4998W, N-Channel enhancement mode 100V/5.6A,RDS(ON)=120m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/4.2A,RDS(ON)=130m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

 8.3. Size:831K  globaltech semi
 gsm4996.pdf pdf_icon

GSM4997

GSM4996 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM4996, N-Channel enhancement mode 90V/7.6A,RDS(ON)=68m@VGS=10V MOSFET, uses Advanced Trench Technology to 90V/6.8A,RDS(ON)=75m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

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Datasheet: GSM4936WS , GSM4946 , GSM4946BW , GSM4946W , GSM4948 , GSM4953S , GSM4953WS , GSM4996 , IRF730 , GSM4998 , GSM4998W , GSM5004S , GSM5008S , GSM501DEA , GSM5604 , GSM5606 , GSM6202S .

History: SHD230452

Keywords - GSM4997 MOSFET datasheet

 GSM4997 cross reference
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