All MOSFET. GSM6520S Datasheet

 

GSM6520S Datasheet and Replacement


   Type Designator: GSM6520S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0076 Ohm
   Package: DFN5X6-8L
 

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GSM6520S Datasheet (PDF)

 ..1. Size:920K  globaltech semi
 gsm6520s.pdf pdf_icon

GSM6520S

GSM6520S GSM6520S 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM6520S, N-Channel enhancement mode 30V/16A,RDS(ON)=7.6m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/13A,RDS(ON)=12.4m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suite

 9.1. Size:1368K  globaltech semi
 gsm6506s.pdf pdf_icon

GSM6520S

GSM6506S GSM6506S 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM6506S, N-Channel enhancement mode 30V/18A,RDS(ON)=2.5m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/12A,RDS(ON)=3.5m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suited for low

 9.2. Size:436K  globaltech semi
 gsm6561.pdf pdf_icon

GSM6520S

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM6561, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=102m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS(ON) voltage power

 9.3. Size:898K  globaltech semi
 gsm6530s.pdf pdf_icon

GSM6520S

GSM6530S GSM6530S 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM6530S, N-Channel enhancement mode 30V/15A,RDS(ON)=4.7m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=6.2m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suited

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Datasheet: GSM5606 , GSM6202S , GSM6236S , GSM6332 , GSM6405 , GSM6405WS , GSM6424 , GSM6506S , HY1906P , GSM6530S , GSM6561 , GSM6562 , GSM6601 , GSM6602 , GSM6604 , GSM6801 , GSM6820 .

History: TF2317 | NVMFS5C410N | DHB16N06 | AP60SL650AFI | BLP04N10-P | SPB03N60C3 | SM140R50CT1TL

Keywords - GSM6520S MOSFET datasheet

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