All MOSFET. GSM6562 Datasheet

 

GSM6562 Datasheet and Replacement


   Type Designator: GSM6562
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TSOP-6
 

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GSM6562 Datasheet (PDF)

 ..1. Size:436K  globaltech semi
 gsm6562.pdf pdf_icon

GSM6562

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM6562, N-Channel enhancement mode 30V/3.6A,RDS(ON)=70m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=78m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=95m@VGS=2.5V These devices are particularly suited for low Super high density cell design for ex

 8.1. Size:436K  globaltech semi
 gsm6561.pdf pdf_icon

GSM6562

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM6561, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=102m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS(ON) voltage power

 9.1. Size:1368K  globaltech semi
 gsm6506s.pdf pdf_icon

GSM6562

GSM6506S GSM6506S 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM6506S, N-Channel enhancement mode 30V/18A,RDS(ON)=2.5m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/12A,RDS(ON)=3.5m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suited for low

 9.2. Size:920K  globaltech semi
 gsm6520s.pdf pdf_icon

GSM6562

GSM6520S GSM6520S 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM6520S, N-Channel enhancement mode 30V/16A,RDS(ON)=7.6m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/13A,RDS(ON)=12.4m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suite

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Datasheet: GSM6332 , GSM6405 , GSM6405WS , GSM6424 , GSM6506S , GSM6520S , GSM6530S , GSM6561 , 5N50 , GSM6601 , GSM6602 , GSM6604 , GSM6801 , GSM6820 , GSM6830 , GSM6993 , GSM7002 .

History: SI1499DH | AOD518 | SD10425JAA | PDNM8TP20V7E | HGB037N10S | MTN15N50E3 | ME7705

Keywords - GSM6562 MOSFET datasheet

 GSM6562 cross reference
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 GSM6562 substitution
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