All MOSFET. GSM7002J Datasheet

 

GSM7002J MOSFET. Datasheet pdf. Equivalent


   Type Designator: GSM7002J
   Marking Code: 702
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 0.115 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 10 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
   Package: SOT-23

 GSM7002J Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GSM7002J Datasheet (PDF)

 ..1. Size:434K  globaltech semi
 gsm7002j.pdf

GSM7002J GSM7002J

GSM7002J 60V N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002J is the N-Channel enhancement 60V/0.50A , RDS(ON)= 7.5@VGS=10V mode field effect transistors are produced using 60V/0.05A , RDS(ON)= 7.5@VGS=5V high cell density DMOS technology. Super high density cell design for extremely low RDS (ON) These products have been designed to minimize

 7.1. Size:429K  globaltech semi
 gsm7002w.pdf

GSM7002J GSM7002J

GSM7002W 60V N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002W is the N-Channel enhancement 60V/0.50A , RDS(ON)= 7.5@VGS=10V mode field effect transistors are produced using 60V/0.05A , RDS(ON)= 7.5@VGS=5V high cell density DMOS technology. Super high density cell design for extremely low RDS (ON) These products have been designed to minimize

 7.2. Size:289K  globaltech semi
 gsm7002t.pdf

GSM7002J GSM7002J

Dual N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002T is the Dual N-Channel 60V/0.50A , RDS(ON)= 2.0@VGS=10V enhancement mode field effect transistors are 60V/0.20A , RDS(ON)= 4.0@VGS=4.5V produced using high cell density DMOS Super high density cell design for extremely technology. low RDS (ON) Exceptional on-resistance and maximum

 7.3. Size:988K  globaltech semi
 gsm7002k.pdf

GSM7002J GSM7002J

GSM7002K 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM7002K, N-Channel enhancement mode 60V/0.5A , RDS(ON)=2.4@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/0.3A , RDS(ON)=3.0@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low E

 7.4. Size:808K  globaltech semi
 gsm7002.pdf

GSM7002J GSM7002J

60V N-Channel Enhancement Mode MOSFET Product Description Features The GS7002 is the N-Channel enhancement mode 60V/0.50A , RDS(ON)= 6.0@VGS=10V field effect transistors are produced using high cell 60V/0.30A , RDS(ON)= 7.0@VGS=5V density DMOS technology. These products have Super high density cell design for extremely been designed to minimize on-state resistance lo

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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