All MOSFET. GSM7424S Datasheet

 

GSM7424S Datasheet and Replacement


   Type Designator: GSM7424S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: DFN33X33-8L
 

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GSM7424S Datasheet (PDF)

 ..1. Size:755K  globaltech semi
 gsm7424s.pdf pdf_icon

GSM7424S

GSM7424S GSM7424S 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM7424S, N-Channel enhancement mode 30V/20A,RDS(ON)=5m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/15A,RDS(ON)=7m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suited for

 8.1. Size:870K  globaltech semi
 gsm7420.pdf pdf_icon

GSM7424S

GSM7420 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM7420, N-Channel enhancement mode 30V/3.6A , RDS(ON)= 60m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.6A , RDS(ON)= 70m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for l

 9.1. Size:862K  globaltech semi
 gsm7412.pdf pdf_icon

GSM7424S

GSM7412 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM7412, N-Channel enhancement mode 20V/3.8A , RDS(ON)= 52m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A , RDS(ON)= 56m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.8A , RDS(ON)= 68m@VGS=1.8V Super high density cell design for extremely These devices a

 9.2. Size:885K  globaltech semi
 gsm7472s.pdf pdf_icon

GSM7424S

GSM7472S GSM7472S 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM7472S, N-Channel enhancement mode 30V/15A,RDS(ON)=8.6m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/13A,RDS(ON)=14m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suited

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Datasheet: GSM7002K , GSM7002T , GSM7002W , GSM7106S , GSM7400 , GSM7402 , GSM7412 , GSM7420 , IRFP260N , GSM7472S , GSM7617WS , GSM7619WS , GSM7923WS , GSM8205 , GSM8206 , GSM8411 , GSM8412 .

History: SML3520BN | QM4301S | AFN9977 | 2SK2870L | IPI16CN10N | AFN9971 | KNB2803A

Keywords - GSM7424S MOSFET datasheet

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