All MOSFET. GSM8412 Datasheet

 

GSM8412 MOSFET. Datasheet pdf. Equivalent


   Type Designator: GSM8412
   Marking Code: 8412
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 3.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.8 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SOT-223

 GSM8412 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GSM8412 Datasheet (PDF)

 ..1. Size:879K  globaltech semi
 gsm8412.pdf

GSM8412 GSM8412

GSM8412 GSM8412 100V N-Channel Enhancement Mode MOSFET Product Description Features 100V/3.6A,RDS(ON)=300m@VGS=10V GSM8412, N-Channel enhancement mode 100V/3.0A,RDS(ON)=310m@VGS=4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. SOT-223 package design

 8.1. Size:910K  globaltech semi
 gsm8411.pdf

GSM8412 GSM8412

GSM8411 GSM8411 100V N-Channel Enhancement Mode MOSFET Product Description Features 100V/5.8A,RDS(ON)=115m@VGS=10V GSM8411, N-Channel enhancement mode 100V/4.6A,RDS(ON)=125m@VGS=4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particularly

 9.1. Size:1204K  globaltech semi
 gsm8471.pdf

GSM8412 GSM8412

GSM8471 GSM8471 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM8471, N-Channel enhancement mode 60V/5.8A,RDS(ON)=54m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/4.6A,RDS(ON)=60m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (

 9.2. Size:876K  globaltech semi
 gsm8439.pdf

GSM8412 GSM8412

GSM8439 GSM8439 30V N-Channel Enhancement Mode MOSFET Product Description Features 30V/6.0A,RDS(ON)=45m@VGS=4.5V GSM8439, N-Channel enhancement mode 30V/5.5A,RDS(ON)=55m@VGS=2.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particularly

 9.3. Size:837K  globaltech semi
 gsm8483.pdf

GSM8412 GSM8412

GSM8483 GSM8483 100V P-Channel Enhancement Mode MOSFET Product Description Features -100V/-3.8A,RDS(ON)=260m@VGS=-10V GSM8483, P-Channel enhancement mode -100V/-2.6A,RDS(ON)=290m@VGS=-4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. SOT-223 package de

 9.4. Size:903K  globaltech semi
 gsm8473.pdf

GSM8412 GSM8412

GSM8473 GSM8473 60V P-Channel Enhancement Mode MOSFET Product Description Features -60V/-4.8A,RDS(ON)=135m@VGS=-10V GSM8473, P-Channel enhancement mode -60V/-3.6A,RDS(ON)=155m@VGS=-4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particula

 9.5. Size:874K  globaltech semi
 gsm8459.pdf

GSM8412 GSM8412

GSM8459 GSM8459 30V N-Channel Enhancement Mode MOSFET Product Description Features 30V/6.0A,RDS(ON)=44m@VGS=10V GSM8459, N-Channel enhancement mode 30V/5.5A,RDS(ON)=50m@VGS=4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particularly

 9.6. Size:787K  globaltech semi
 gsm8452.pdf

GSM8412 GSM8412

GSM8452 GSM8452 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-5.0A,RDS(ON)=70m@VGS=-10V GSM8452, P-Channel enhancement mode -30V/-4.2A,RDS(ON)=90m@VGS=-4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particularl

 9.7. Size:1463K  globaltech semi
 gsm8451.pdf

GSM8412 GSM8412

GSM8451 GSM8451 60V P-Channel Enhancement Mode MOSFET Product Description Features -60V/-3.0A,RDS(ON)=305m@VGS=-10V GSM8451, P-Channel enhancement mode -60V/-2.0A,RDS(ON)=330m@VGS=-4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particularly

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: MCH6321

 

 
Back to Top