All MOSFET. GSM8471 Datasheet

 

GSM8471 Datasheet and Replacement


   Type Designator: GSM8471
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm
   Package: SOT-223
 

 GSM8471 substitution

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GSM8471 Datasheet (PDF)

 ..1. Size:1204K  globaltech semi
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GSM8471

GSM8471 GSM8471 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM8471, N-Channel enhancement mode 60V/5.8A,RDS(ON)=54m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/4.6A,RDS(ON)=60m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (

 8.1. Size:903K  globaltech semi
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GSM8471

GSM8473 GSM8473 60V P-Channel Enhancement Mode MOSFET Product Description Features -60V/-4.8A,RDS(ON)=135m@VGS=-10V GSM8473, P-Channel enhancement mode -60V/-3.6A,RDS(ON)=155m@VGS=-4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particula

 9.1. Size:876K  globaltech semi
 gsm8439.pdf pdf_icon

GSM8471

GSM8439 GSM8439 30V N-Channel Enhancement Mode MOSFET Product Description Features 30V/6.0A,RDS(ON)=45m@VGS=4.5V GSM8439, N-Channel enhancement mode 30V/5.5A,RDS(ON)=55m@VGS=2.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particularly

 9.2. Size:910K  globaltech semi
 gsm8411.pdf pdf_icon

GSM8471

GSM8411 GSM8411 100V N-Channel Enhancement Mode MOSFET Product Description Features 100V/5.8A,RDS(ON)=115m@VGS=10V GSM8411, N-Channel enhancement mode 100V/4.6A,RDS(ON)=125m@VGS=4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particularly

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Datasheet: GSM8205 , GSM8206 , GSM8411 , GSM8412 , GSM8439 , GSM8451 , GSM8452 , GSM8459 , IRF9540 , GSM8473 , GSM8483 , GSM8803 , GSM8816 , GSM8822 , GSM8822S , GSM8823 , GSM8904 .

History: SWP076R68E7T | IPI075N15N3G | IPW60R075CPA | MCPF05N60B | QM4305D | GSM4412 | KIA840S-220

Keywords - GSM8471 MOSFET datasheet

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