GSM8822S Datasheet and Replacement

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM8822S, N-Channel enhancement mode 20V/6.5A,RDS(ON)=32m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.8A,RDS(ON)=35m@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for These devices are particularly suited for low extremely low RDS (ON) volt

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM8822, N-Channel enhancement mode 20V/7.2A,RDS(ON)=28m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/4.8A,RDS(ON)=32m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/3.0A,RDS(ON)=45m@VGS=1.8V These devices are particularly suited for low Super high density cell desig

GSM8823 20V Common-Drain P-Channel Enhancement Mode MOSFET Product Description Features GSM8823, P-Channel enhancement mode -20V/-7.2A,RDS(ON)=48m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-4.8A,RDS(ON)=62m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-3.0A,RDS(ON)=88m@VGS=-1.8V Super high density cell design for extremely

GSM8803 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM8803, P-Channel enhancement mode -20V/-5.4A,RDS(ON)=32m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-4.0A,RDS(ON)=42m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-3.0A,RDS(ON)=58m@VGS=-1.8V Super high density cell design for extremely These devic

GSM8816 30V Common-Drain N-Channel Enhancement Mode MOSFET Product Description Features GSM8816, N-Channel enhancement mode 30V/8A,RDS(ON)=21m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5A,RDS(ON)=24m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/4A,RDS(ON)=27m@VGS=2.5V Super high density cell design for extremely These devices