GSM8823 MOSFET. Datasheet pdf. Equivalent
Type Designator: GSM8823
Marking Code: 8823
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.8 V
|Id|ⓘ - Maximum Drain Current: 7.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 8 nC
trⓘ - Rise Time: 1000 nS
Cossⓘ - Output Capacitance: 115 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
Package: TSSOP-8P
GSM8823 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GSM8823 Datasheet (PDF)
gsm8823.pdf
GSM8823 20V Common-Drain P-Channel Enhancement Mode MOSFET Product Description Features GSM8823, P-Channel enhancement mode -20V/-7.2A,RDS(ON)=48m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-4.8A,RDS(ON)=62m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-3.0A,RDS(ON)=88m@VGS=-1.8V Super high density cell design for extremely
gsm8822.pdf
20V N-Channel Enhancement Mode MOSFET Product Description Features GSM8822, N-Channel enhancement mode 20V/7.2A,RDS(ON)=28m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/4.8A,RDS(ON)=32m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/3.0A,RDS(ON)=45m@VGS=1.8V These devices are particularly suited for low Super high density cell desig
gsm8822s.pdf
20V N-Channel Enhancement Mode MOSFET Product Description Features GSM8822S, N-Channel enhancement mode 20V/6.5A,RDS(ON)=32m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.8A,RDS(ON)=35m@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for These devices are particularly suited for low extremely low RDS (ON) volt
gsm8803.pdf
GSM8803 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM8803, P-Channel enhancement mode -20V/-5.4A,RDS(ON)=32m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-4.0A,RDS(ON)=42m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-3.0A,RDS(ON)=58m@VGS=-1.8V Super high density cell design for extremely These devic
gsm8816.pdf
GSM8816 30V Common-Drain N-Channel Enhancement Mode MOSFET Product Description Features GSM8816, N-Channel enhancement mode 30V/8A,RDS(ON)=21m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5A,RDS(ON)=24m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/4A,RDS(ON)=27m@VGS=2.5V Super high density cell design for extremely These devices
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