GSM8988W MOSFET Datasheet: N-Ch, 100V, 4.6A. Full specification with pinout and replacement list

GSM8988W Specs and Replacement

Type Designator: GSM8988W

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 90 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: SOT-89

GSM8988W substitution

- MOSFET ⓘ Cross-Reference Search

GSM8988W datasheet

..1. Size:886K globaltech semi
gsm8988w.pdf pdf_icon

GSM8988W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM8988W, N-Channel enhancement mode 100V/4.6A,RDS(ON)=130m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=138m @ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for ... See More ⇒

7.1. Size:887K globaltech semi
gsm8988.pdf pdf_icon

GSM8988 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM8988, N-Channel enhancement mode 100V/4.6A,RDS(ON)=120m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=130m @ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for lo... See More ⇒

8.1. Size:777K globaltech semi
gsm8987w.pdf pdf_icon