All MOSFET. GSM9971 Datasheet

 

GSM9971 Datasheet and Replacement


   Type Designator: GSM9971
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: TO-252
 

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GSM9971 Datasheet (PDF)

 ..1. Size:433K  globaltech semi
gsm9971.pdf pdf_icon

GSM9971

60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9971, N-Channel enhancement mode 60V/18A,RDS(ON)= 42m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/12A,RDS(ON)= 50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 0.1. Size:922K  globaltech semi
gsm9971b.pdf pdf_icon

GSM9971

GSM9971B 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9971B, N-Channel enhancement mode 60V/18A,RDS(ON)=56m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)=62m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 8.1. Size:931K  globaltech semi
gsm9972s.pdf pdf_icon

GSM9971

GSM9972S 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9972S, N-Channel enhancement mode 60V/35A,RDS(ON)=15m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/25A,RDS(ON)=18m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 8.2. Size:803K  globaltech semi
gsm9977.pdf pdf_icon

GSM9971

GSM9977 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9977, N-Channel enhancement mode 60V/8A,RDS(ON)=118m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/6A,RDS(ON)=130m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low T

Datasheet: GSM9435WS , GSM9498 , GSM9510S , GSM9565S , GSM9566W , GSM9575S , GSM9576 , GSM9910 , 10N65 , GSM9971B , GSM9972S , GSM9977 , GSM9987 , GSM9990S , GSM9995S , GSM9997 , GSMBSS123 .

History: SFF440 | SIHF9530S | AP9973GJ-HF

Keywords - GSM9971 MOSFET datasheet

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