GSM9977 Datasheet. Specs and Replacement

Type Designator: GSM9977

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.118 Ohm

Package: TO-252

GSM9977 substitution

- MOSFET ⓘ Cross-Reference Search

 

GSM9977 datasheet

 ..1. Size:803K  globaltech semi
 gsm9977.pdf pdf_icon

GSM9977

GSM9977 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9977, N-Channel enhancement mode 60V/8A,RDS(ON)=118m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/6A,RDS(ON)=130m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low T... See More ⇒

 8.1. Size:931K  globaltech semi
 gsm9972s.pdf pdf_icon

GSM9977

GSM9972S 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9972S, N-Channel enhancement mode 60V/35A,RDS(ON)=15m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/25A,RDS(ON)=18m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low ... See More ⇒

 8.2. Size:922K  globaltech semi
 gsm9971b.pdf pdf_icon

GSM9977

GSM9971B 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9971B, N-Channel enhancement mode 60V/18A,RDS(ON)=56m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)=62m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low ... See More ⇒

 8.3. Size:433K  globaltech semi
 gsm9971.pdf pdf_icon

GSM9977

60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9971, N-Channel enhancement mode 60V/18A,RDS(ON)= 42m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/12A,RDS(ON)= 50m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power ... See More ⇒

SHOW MORE

Detailed specifications: GSM9565S, GSM9566W, GSM9575S, GSM9576, GSM9910, GSM9971, GSM9971B, GSM9972S, 2SK3568, GSM9987, GSM9990S, GSM9995S, GSM9997, GSMBSS123, GSMBSS138, GSMBSS84, H5N2001LM

Keywords - GSM9977 MOSFET specs

 GSM9977 cross reference

 GSM9977 equivalent finder

 GSM9977 pdf lookup

 GSM9977 substitution

 GSM9977 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility