All MOSFET. GSM9990S Datasheet

 

GSM9990S MOSFET. Datasheet pdf. Equivalent


   Type Designator: GSM9990S
   Marking Code: 9990S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 35 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
   Package: TO-252

 GSM9990S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GSM9990S Datasheet (PDF)

 ..1. Size:989K  globaltech semi
 gsm9990s.pdf

GSM9990S GSM9990S

GSM9990S 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9990S, N-Channel enhancement mode 60V/40A,RDS(ON)=7.8m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/25A,RDS(ON)=9.8m@VGS=6V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low TO-252-2L

 8.1. Size:963K  globaltech semi
 gsm9997.pdf

GSM9990S GSM9990S

GSM9997 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM9997, N-Channel enhancement mode 100V/8A,RDS(ON)=120m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/6A,RDS(ON)=125m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 8.2. Size:891K  globaltech semi
 gsm9995s.pdf

GSM9990S GSM9990S

GSM9995S 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM9995S, N-Channel enhancement mode 100V/20A,RDS(ON)=45m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/16A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.1. Size:931K  globaltech semi
 gsm9972s.pdf

GSM9990S GSM9990S

GSM9972S 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9972S, N-Channel enhancement mode 60V/35A,RDS(ON)=15m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/25A,RDS(ON)=18m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.2. Size:922K  globaltech semi
 gsm9971b.pdf

GSM9990S GSM9990S

GSM9971B 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9971B, N-Channel enhancement mode 60V/18A,RDS(ON)=56m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)=62m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.3. Size:673K  globaltech semi
 gsm9987.pdf

GSM9990S GSM9990S

GSM9987 GSM9987 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM9987, N-Channel enhancement mode 90V/15A,RDS(ON)= 75m@VGS=10V MOSFET, uses Advanced Trench 90V/12A,RDS(ON)= 85m@VGS=4.5V Technology to provide excellent RDS(ON), low Super high density cell design for extremely gate charge. These devices are particularly low RDS (ON) suit

 9.4. Size:803K  globaltech semi
 gsm9977.pdf

GSM9990S GSM9990S

GSM9977 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9977, N-Channel enhancement mode 60V/8A,RDS(ON)=118m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/6A,RDS(ON)=130m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low T

 9.5. Size:433K  globaltech semi
 gsm9971.pdf

GSM9990S GSM9990S

60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9971, N-Channel enhancement mode 60V/18A,RDS(ON)= 42m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/12A,RDS(ON)= 50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 9.6. Size:1005K  globaltech semi
 gsm9910.pdf

GSM9990S GSM9990S

GSM9910 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM9910, N-Channel enhancement mode 100V/4A,RDS(ON)=320m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/4A,RDS(ON)=340m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SDF4NA100SXH

 

 
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