H5N2522FP-E0 Datasheet and Replacement
Type Designator: H5N2522FP-E0
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 12
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 57
nS
Cossⓘ -
Output Capacitance: 185
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.17
Ohm
Package:
TO-220FP
- MOSFET Cross-Reference Search
H5N2522FP-E0 Datasheet (PDF)
..1. Size:90K renesas
h5n2522fp-e0.pdf 
Preliminary DatasheetH5N2522FP-E0-E R07DS0862EJ0100250V - 12A - MOS FET Rev.1.00High Speed Power Switching Jul 27, 2012Features Low on-resistance RDS(on) = 0.13 typ. (at ID = 6 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code: PRSS0003AG-A(Package name: TO-220FP)D1
7.1. Size:84K renesas
r07ds0057ej h5n2522ls.pdf 
Preliminary Datasheet H5N2522LS R07DS0057EJ0200(Previous: REJ03G1667-0100)Silicon N Channel MOS FET Rev.2.00High Speed Power Switching Jul 23, 2010Features Low on-resistance RDS(on) = 0.14 typ. (at ID = 10 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code: PRSS0004AE-B
9.1. Size:93K renesas
rej03g0413 h5n2515p.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.2. Size:114K renesas
rej03g0478 h5n2519p.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.3. Size:132K renesas
rej03g1107 h5n2505dldsds.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.4. Size:65K renesas
rej03g1203 h5n2514p.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.5. Size:104K renesas
rej03g1108 h5n2508dldsds.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.6. Size:100K renesas
rej03g1109 h5n2509pds.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.7. Size:108K renesas
r07ds0399ej h5n2504dl.pdf 
Preliminary Datasheet H5N2504DL, H5N2504DS R07DS0399EJ0300(Previous: REJ03G1106-0200)Silicon N Channel MOS FET Rev.3.00High Speed Power Switching May 16, 2011Features Low on-resistance Low leakage current High speed switching Low gate charge Avalanche ratings Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C(Package
9.8. Size:92K renesas
h5n2512fl-m0.pdf 
Preliminary Datasheet H5N2512FL-M0 R07DS0997EJ0100250V - 18A - MOS FET Rev.1.00High Speed Power Switching Jan 08, 2013Features Low on-resistance RDS(on) = 0.082 typ. (at ID = 9 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D
9.9. Size:128K renesas
h5n2507p.pdf 
Preliminary Datasheet H5N2507P R07DS0877EJ0200(Previous: RJJ03G0646-0100)250V - 50A - MOS FET Rev.2.00High Speed Power Switching Sep 12, 2012Features Low on-resistance RDS(on) = 0.04 typ. (at ID = 25 A, VGS= 10 V, Ta = 25C) Low leakage current High speed switching Low gate charge Built-in fast recovery diode Outline RENESAS Package code:
9.10. Size:101K renesas
rej03g1105 h5n2503pds.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.11. Size:73K renesas
rej03g1110 h5n2510dldsds.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
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History: IPB22N03S4L-15
| LSC65R280HT
| 2SK3700
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H5N2522FP-E0 replacement