All MOSFET. H5N3005LM Datasheet

 

H5N3005LM MOSFET. Datasheet pdf. Equivalent

Type Designator: H5N3005LM

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 300 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 49 nC

Rise Time (tr): 30 nS

Drain-Source Capacitance (Cd): 155 pF

Maximum Drain-Source On-State Resistance (Rds): 0.255 Ohm

Package: LDPAK

H5N3005LM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

H5N3005LM Datasheet (PDF)

1.1. h5n3005lm.pdf Size:76K _renesas

H5N3005LM
H5N3005LM

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2.1. rej03g1315 h5n3005ldlslmds.pdf Size:79K _renesas

H5N3005LM
H5N3005LM

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 4.1. rej03g0007 h5n3003p.pdf Size:137K _renesas

H5N3005LM
H5N3005LM

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.2. rej03g0539 h5n3008p.pdf Size:125K _renesas

H5N3005LM
H5N3005LM

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 4.3. h5n3007fl-m0.pdf Size:92K _renesas

H5N3005LM
H5N3005LM

 Preliminary Datasheet H5N3007FL-M0 R07DS0995EJ0100 300V - 15A - MOS FET Rev.1.00 High Speed Power Switching Jan 09, 2013 Features  Low on-resistance RDS(on) = 0.12  typ. (at ID = 7.5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching  Built-in fast recovery diode Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D

4.4. rej03g1111 h5n3004pds.pdf Size:133K _renesas

H5N3005LM
H5N3005LM

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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